Hot Carriers in Quantum Wells and Superlattices 46. WE-Heraeus-Seminar/Applications of Chlorophyll in Fluorescence 47. WE-Heraeus-Seminar, 6.-8. Juni 1988

1989 ◽  
Vol 45 (2) ◽  
pp. 64-64
Author(s):  
W. Buckel ◽  
H. Lichtenthaler
Keyword(s):  
Quantum Wells ◽  
Hot Carriers

Hot Carriers in Quantum Wells for Photovoltaic Efficiency Enhancement

2014 ◽  
Vol 4 (1) ◽  
pp. 244-252 ◽  
Author(s):  
Louise C. Hirst ◽  
Hiromasa Fujii ◽  
Yunpeng Wang ◽  
Masakazu Sugiyama ◽  
Nicholas J. Ekins-Daukes
Keyword(s):  
Quantum Wells ◽  
Efficiency Enhancement ◽  
Hot Carriers ◽  
Photovoltaic Efficiency

Intersubband relaxation of photoexcited hot carriers in quantum wells

1988 ◽  
Vol 31 (3-4) ◽  
pp. 413-418 ◽  
Author(s):  
D.Y. Oberli ◽  
D.R. Wake ◽  
M.V. Klein ◽  
T. Henderson ◽  
H. Morkoç
Keyword(s):  
Quantum Wells ◽  
Hot Carriers ◽  
Intersubband Relaxation

INTERSUBBAND RELAXATION OF PHOTOEXCITED HOT CARRIERS IN QUANTUM WELLS

1988 ◽  
pp. 413-418
Author(s):  
D.Y. Oberli ◽  
M.V. Klein ◽  
T. Henderson ◽  
D.R. Wake ◽  
H. Morkoç
Keyword(s):  
Quantum Wells ◽  
Hot Carriers ◽  
Intersubband Relaxation

scholarly journals Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures

2015 ◽  
Vol 106 (18) ◽  
pp. 183901 ◽  
Author(s):  
Jean Rodière ◽  
Laurent Lombez ◽  
Alain Le Corre ◽  
Olivier Durand ◽  
Jean-François Guillemoles
Keyword(s):  
Solar Cell ◽  
Quantum Wells ◽  
Experimental Evidence ◽  
Hot Carriers

scholarly journals Механизм и закономерность снижения светового потока светодиодов на основе структур AlGaN/InGaN/GaN с квантовыми ямами при длительном протекании прямого тока различной плотности

2018 ◽  
Vol 52 (3) ◽  
pp. 378
Author(s):  
Ф.И. Маняхин
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Current Flow ◽  
Light Flux ◽  
Voltage Characteristic ◽  
Nonuniform Distribution ◽  
Hot Carriers ◽  
Current Voltage Characteristic ◽  
Light Emitting ◽  
Current Voltage

AbstractThe mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of the semiconductor lattice with hot carriers formed in the mode of deviation of the current–voltage characteristic from the exponential one. An analytical expression for the light-flux decrease upon prolonged current flow, which is confirmed by experimental results, is derived. It is shown that the behavior of the dependence of the light flux on the lifetime is strongly affected by the nonuniform distribution of indium in quantum wells.

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