Factors controlling the etching rate and etching profile in the O2 reactive ion etching pattern transfer step in multilevel lithography

1989 ◽  
Vol 29 (13) ◽  
pp. 878-881 ◽  
Author(s):  
Charles W. Jurgensen ◽  
Eric S. G. Shaqfeh
Keyword(s):  
Etching Rate ◽  
Reactive Ion Etching ◽  
Pattern Transfer ◽  
Ion Etching ◽  
Etching Pattern ◽  
Transfer Step ◽  
Etching Profile

scholarly journals Influence of block copolymer feature size on reactive ion etching pattern transfer into silicon

2017 ◽  
Vol 28 (40) ◽  
pp. 404001 ◽  
Author(s):  
M Dialameh ◽  
F Ferrarese Lupi ◽  
D Imbraguglio ◽  
F Zanenga ◽  
A Lamperti ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Reactive Ion Etching ◽  
Pattern Transfer ◽  
Feature Size ◽  
Ion Etching ◽  
Etching Pattern

Simulation of reactive ion etching pattern transfer

1989 ◽  
Vol 66 (10) ◽  
pp. 4664-4675 ◽  
Author(s):  
Eric S. G. Shaqfeh ◽  
Charles W. Jurgensen
Keyword(s):  
Reactive Ion Etching ◽  
Pattern Transfer ◽  
Ion Etching ◽  
Etching Pattern

Fabrication of nanogaps for MEMS prototyping using focused ion beam as a lithographic tool and reactive ion etching pattern transfer

2007 ◽  
Vol 84 (5-8) ◽  
pp. 1215-1218 ◽  
Author(s):  
Maria Villarroya ◽  
Nuria Barniol ◽  
Cristina Martin ◽  
Francesc Pérez-Murano ◽  
Jaume Esteve ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Pattern Transfer ◽  
Ion Etching ◽  
Etching Pattern

Manipulating Shape and Size of Nanoparticles With Plasma Field

2008 ◽  
Author(s):  
Tao Deng ◽  
James R. Cournoyer ◽  
James H. Schermerhorn ◽  
Joleyn Balch ◽  
Margaret L. Blohm
Keyword(s):  
Silica Nanoparticles ◽  
Orientational Order ◽  
Reactive Ion Etching ◽  
Spherical Particles ◽  
Etching Time ◽  
Ion Etching ◽  
Flat Substrate ◽  
Isotropic Etching ◽  
Reduced Dimensions ◽  
Etching Profile

Tuning the plasma field in reactive ion etching generates different etching profile of nanoparticles. For nanoparticles in an isotropic plasma field, there will be uniform shrinkage of the particle sizes due to the isotropic etching, with the curvature of the particles unchanged after the etching. An anisotropic etching, on the other hand, provides rich opportunities to modify the shape of the particles with reduced dimensions. For a monolayer of silica nanoparticles on a flat substrate in a unidirectional plasma field, the reactive ion etching changed the shape of silica nanoparticles from spherical to spheroid-like geometry. The mathematical description of the final spheroid-like geometry was discussed and matched well with the experimental results. The surface curvature of the particles after etching remained the same for both the top and the bottom surfaces, while the overall shape transformed to spheroid-like geometry. Varying the etching time resulted in particles with different height to width ratios. The unique geometry of these non-spherical particles will impact fundament properties of such particles, such as packing and assembly. In the case of spheroid-like particles, packing of such particles into ordered structures will involve an orientational order, which is different from spherical nanoparticles that have no orientational order.

Use of polymethylmethacrylate as an initial pattern transfer layer in fluorine- and chlorine-based reactive-ion etching

1999 ◽  
Vol 17 (1) ◽  
pp. 113 ◽  
Author(s):  
Christopher J. M. Smith ◽  
Saad K. Murad ◽  
Thomas F. Krauss ◽  
Richard M. De La Rue ◽  
Christopher D. W. Wilkinson
Keyword(s):  
Reactive Ion Etching ◽  
Pattern Transfer ◽  
Transfer Layer ◽  
Ion Etching ◽  
Initial Pattern

scholarly journals ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

2019 ◽  
Vol 62 (10) ◽  
pp. 76-83
Author(s):  
Aleksandr M. Efremov ◽  
Vladimir V. Rybkin ◽  
Vladimir B. Betelin ◽  
Kwang-Ho Kwon
Keyword(s):  
Steady State ◽  
Halogen Atom ◽  
Etching Rate ◽  
Reactive Ion Etching ◽  
Oh Radicals ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Bias Power ◽  
Mixing Ratios ◽  
Adsorption Sites

The effects of both HBr/O2 and Cl2/O2 mixing ratios in HBr+Cl2+O2 gas mixture on plasma parameters, steady-state densities of active species and Si etching kinetics were studied under the typical conditions of reactive ion etching process: total gas pressure (p = 10 mTorr), input power (W = 500 W), bias power (Wdc = 200 W). The data on internal plasma parameters and plasma chemistry were obtained using a combination of Langmuir probe diagnostics and 0-dimensional (global) plasma modeling. It was found that the variation in HBr/O2 mixing ratio at constant Cl2 fraction in a feed gas is characterized by the stronger impact on the steady-state plasma composition through both electron-impact and atom-molecular reaction kinetics as well as allows one to obtain the wider change in the total halogen atom density. It was shown that changes in both HBr/O2 and Cl2/O2 mixing ratios toward O2-rich plasmas lowers the Si etching rate that exhibits no evident correlations with total halogen atom flux and ion energy flux. The model-based analysis of Si etching kinetics allowed one to conclude that the effective reaction probability for Si + Cl/Br heterogeneous reaction depends on the flux of oxidative species – oxygen atoms and OH radicals. The reasons may be 1) the oxidation of silicon resulting in higher reaction threshold energy; and 2) the decreasing fraction of free adsorption sites for Cl/Br atoms due to the oxidation of reaction products into the lower volatile SiBrxOy and SiClxOy compounds.

scholarly journals A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 123
Author(s):  
Katarzyna Racka-Szmidt ◽  
Bartłomiej Stonio ◽  
Jarosław Żelazko ◽  
Maciej Filipiak ◽  
Mariusz Sochacki
Keyword(s):  
Silicon Carbide ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Reactive Ion Etching ◽  
Semiconductor Processing ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Hard Materials ◽  
Potential Benefits ◽  
First Time

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

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