Efficient preparation of polymer nanofibers by needle roller electrospinning with low threshold voltage

2018 ◽  
Vol 59 (4) ◽  
pp. 745-751 ◽  
Author(s):  
Yanping Zhang ◽  
Liyan Zhang ◽  
Lisheng Cheng ◽  
Yongxin Qin ◽  
Yi Li ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Polymer Nanofibers ◽  
Low Threshold

scholarly journals Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications

2020 ◽  
pp. 1-1
Author(s):  
A. Razavieh ◽  
Y. Chen ◽  
T. Ethirajan ◽  
M. Gu ◽  
S. Cimino ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Low Threshold

Cyanophenoxy-Substituted Silicon Phthalocyanines for Low Threshold Voltage n-Type Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Silicon Phthalocyanines ◽  
Low Threshold

Inner-Gate-Engineered GAA MOSFET to Enhance the Electrostatic Integrity

NANO ◽  
2019 ◽  
Vol 14 (10) ◽  
pp. 1950128 ◽  
Author(s):  
Biswajit Jena ◽  
Sidhartha Dash ◽  
Soumya Ranjan Routray ◽  
Guru Prasad Mishra
Keyword(s):  
Threshold Voltage ◽  
Packing Density ◽  
Figures Of Merit ◽  
Engineering Technique ◽  
Conventional Structure ◽  
Low Threshold ◽  
Gate Engineering ◽  
Electrostatic Control ◽  
Technology Nodes ◽  
Rf Performances

Gate-all-around (GAA) MOSFETs are the best multi-gate MOSFET structure due to their strong electrostatic control over the channel. The electrostatic controllability can be enhanced further by applying some gate engineering technique to the existing GAA structure. This paper investigates the effect of inner gate (core gate) on the electrostatic performance of conventional GAA MOSFET. The inner gate engineering increases both the electrostatic control and packing density of GAA MOSFET. In this paper, we have presented an inner-gate-engineered (IGE) GAA MOSFET and inspected its advantages over conventional counterparts. The proposed structure exhibits higher [Formula: see text] ratio, low threshold voltage and improved RF performances as compared to the conventional structure. Analytic simulation has been carried out for numerous figures of merit (FOMs) for different technology nodes.

scholarly journals Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhuofa Chen ◽  
Dedong Han ◽  
Xing Zhang ◽  
Yi Wang
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Channel Structure ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Processing Temperature ◽  
Active Layers ◽  
Low Threshold ◽  
Channel Configuration

AbstractIn this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advantages of SAL TFTs (a low off-state current) and DAL TFTs (a high mobility and a low threshold voltage). The proposed TAL TFTs exhibit superior electrical performance, e.g. a high on-off state current ratio of 2 × 108, a low threshold voltage of 0.63 V, a high field effect mobility of 128.6 cm2/Vs, and a low off-state current of 3.3 pA. The surface morphology and characteristics of the ITO and TZO films were investigated and the TZO film was found to be C-axis-aligned crystalline (CAAC). A simplified resistance model was deduced to explain the channel resistance of the proposed TFTs. At last, TAL TFTs with different channel lengths were also discussed to show the stability and the uniformity of our fabrication process. Owing to its low-processing temperature, superior electrical performance, and low cost, TFTs with the proposed TAL channel configuration are highly promising for flexible displays where the polymeric substrates are heat-sensitive and a low processing temperature is desirable.

Low-threshold-voltage thin-film electroluminescent devices

1981 ◽  
Vol 28 (6) ◽  
pp. 698-702 ◽  
Author(s):  
K. Okamoto ◽  
Y. Nasu ◽  
Y. Hamakawa
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Electroluminescent Devices ◽  
Low Threshold
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