Relative activation energies and frequency factors for competing fragmentations of oxetane molecular ions

1975 ◽  
Vol 10 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Guilford Jones Ii ◽  
Lorraine P. McDonnell
Keyword(s):  
Activation Energies ◽  
Molecular Ions ◽  
Relative Activation

Calculation of the relative activation energies for reactions forming metal sulfides

1977 ◽  
Vol 12 (2) ◽  
pp. 213-215 ◽  
Author(s):  
Yu. N. Makurin ◽  
V. I. Dvoinin ◽  
G. A. Kitaev
Keyword(s):  
Activation Energies ◽  
Metal Sulfides ◽  
Relative Activation

Luminescent properties of x-irradiated rare-earth-doped barium copper oxides

1987 ◽  
Vol 2 (6) ◽  
pp. 871-875 ◽  
Author(s):  
D. W. Cooke ◽  
H. Rempp ◽  
Z. Fisk ◽  
J. L. Smith ◽  
M. S. Jahan
Keyword(s):  
Rare Earth ◽  
Vacancy Concentration ◽  
Luminescent Properties ◽  
Activation Energies ◽  
Molecular Ions ◽  
Oxide Superconductors ◽  
Oxygen Vacancy Concentration ◽  
Emission Data ◽  
Radiation Induced ◽  
Induced Defects

Thermally stimulated luminescence (TSL) of x-ray-induced defects in R-Ba–Cu–O (R = Gd, Ho, and Eu) has been measured. In the interval 25–400°C, Ho- and Eu-doped samples exhibit similar TSL with peaks at 65, 135, and 185°C. The GdBa2Cu3Ox has, in addition to the three aforementioned peaks, a maximum at 310°C. All TSL peaks are attributed to recombination of F+s – and F−s center electrons with Vs-type holes, requiring typical thermal activation energies 0.5–1.0 eV. Spectral emission data support this conclusion. Irreversible quenching of TSL is found to occur in each sample. It is postulated that adsorbed oxygen molecules interact with radiation-induced F+s and Fs centers to produce O−2 and O2−2 molecular ions, respectively, thereby reducing the surface oxygen vacancy concentration and quenching the luminescence. In addition to activation energies, other TSL parameters are extracted from the data. It is suggested that surface TSL in these oxide superconductors is independent of rare-earth dopant.

Radiation less transitions in gas phase molecular ions

1980 ◽  
Vol 77 ◽  
pp. 705-718 ◽  
Author(s):  
Sydney Leach ◽  
Gérald Dujardin ◽  
Guy Taieb
Keyword(s):  
Gas Phase ◽  
Molecular Ions

THERMAL MODEL FOR THE DESORPTION OF (MOLECULAR) IONS INDUCED BY MeV HEAVY IONS

1989 ◽  
Vol 50 (C2) ◽  
pp. C2-237-C2-243 ◽  
Author(s):  
H. VOIT ◽  
E. NIESCHLER ◽  
B. NEES ◽  
R. SCHMIDT ◽  
CH. SCHOPPMANN ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Thermal Model ◽  
Molecular Ions

Dissociative recombination of electrons and molecular ions

1982 ◽  
Vol 136 (1) ◽  
pp. 25 ◽  
Author(s):  
Aleksandr V. Eletskii ◽  
Boris M. Smirnov
Keyword(s):  
Dissociative Recombination ◽  
Molecular Ions

Gaseous Molecular Ions

1992 ◽  
Author(s):  
Eugen Illenberger ◽  
Jacques Momigny
Keyword(s):  
Molecular Ions

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Sign in / Sign up

Export Citation Format

Share Document