scholarly journals An intergranular strain concept for material models formulated as rate equations

2020 ◽  
Vol 44 (7) ◽  
pp. 1003-1018 ◽  
Author(s):  
Manuel Bode ◽  
Wolfgang Fellin ◽  
David Mašín ◽  
Gertraud Medicus ◽  
Alexander Ostermann
Keyword(s):  
Rate Equations ◽  
Material Models ◽  
Intergranular Strain

Dielectronic Recombination in the Average-Atom Model

1988 ◽  
Vol 102 ◽  
pp. 215
Author(s):  
R.M. More ◽  
G.B. Zimmerman ◽  
Z. Zinamon
Keyword(s):  
Detailed Balance ◽  
Systematic Errors ◽  
Dielectronic Recombination ◽  
Rate Equations ◽  
Strong Correlations ◽  
Dense Plasmas ◽  
Atom Model ◽  
New Feature ◽  
Average Atom Model ◽  
Attachment Process

Autoionization and dielectronic attachment are usually omitted from rate equations for the non–LTE average–atom model, causing systematic errors in predicted ionization states and electronic populations for atoms in hot dense plasmas produced by laser irradiation of solid targets. We formulate a method by which dielectronic recombination can be included in average–atom calculations without conflict with the principle of detailed balance. The essential new feature in this extended average atom model is a treatment of strong correlations of electron populations induced by the dielectronic attachment process.

On the interpretation of dislocation-loop growth during in-situ high-voltage Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 532-533
Author(s):  
E. Holzäpfel ◽  
F. Phillipp ◽  
M. Wilkens
Keyword(s):  
Point Defect ◽  
Rate Equations ◽  
Rate Theory ◽  
Dislocation Loops ◽  
High Voltage Electron Microscopy ◽  
Vacancy Migration ◽  
Voltage Electron ◽  
Reaction Rate Theory ◽  
Defect Reactions

During in-situ radiation damage experiments aiming on the investigation of vacancy-migration properties interstitial-type dislocation loops are used as probes monitoring the development of the point defect concentrations. The temperature dependence of the loop-growth rate v is analyzed in terms of reaction-rate theory yielding information on the vacancy migration enthalpy. The relation between v and the point-defect production rate P provides a critical test of such a treatment since it is sensitive to the defect reactions which are dominant. If mutual recombination of vacancies and interstitials is the dominant reaction, vαP0.5 holds. If, however, annihilation of the defects at unsaturable sinks determines the concentrations, a linear relationship vαP is expected.Detailed studies in pure bcc-metals yielded vαPx with 0.7≾×≾1.0 showing that besides recombination of vacancies and interstitials annihilation at sinks plays an important role in the concentration development which has properly to be incorporated into the rate equations.

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

1997 ◽  
Vol 2 ◽  
Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Rate Equations ◽  
Time Resolved ◽  
Versus Layer ◽  
Level Model ◽  
Shallow Impurities ◽  
Aln Buffer ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

Challenges Towards Developing a High Fidelity Database for Validating High Strain Rate Composite Material Models

2021 ◽  
Author(s):  
Mark Pankow ◽  
Joseph Giliberto ◽  
Brandon Hearley ◽  
Brian Justusson ◽  
Joseph Schaefer ◽  
...  
Keyword(s):  
Composite Material ◽  
High Strain Rate ◽  
Strain Rate ◽  
High Strain ◽  
High Fidelity ◽  
Material Models

Photocatalytic Discolouration of Solutions of Reactive Dyes in the Presence of H2O2

1995 ◽  
Vol 30 (1) ◽  
pp. 53-60 ◽  
Author(s):  
Deng Nansheng ◽  
Tian Shizhong ◽  
Xia Mei
Keyword(s):  
Photochemical Reaction ◽  
Uv Light ◽  
Reactive Dyes ◽  
Solar Light ◽  
Rate Equations ◽  
Oh Radical ◽  
Test Results ◽  
Dye Molecules ◽  
First Order ◽  
Dye Solutions

Abstract Tests for the photocatalytic degradation of solutions of three reactive dyes, Red M-5B, Procion Blue MX-R and Procion Black H-N, in the presence of H2O2 were carried out. When the solutions of the three reactive dyes were irradiated by UV or solar light, the colour of the solutions disappeared gradually. A statistical analysis of the test results indicated a linear relation between the concentration of dyes and the time of irradiation. The discolouration reaction of the solutions was of the first order. Rate equations for the discolouration reactions of dye solutions were developed. The dark reactions or the dye solutions containing H2O2 were very slow, illustrating that the photochemical reaction played a very important role. It was demonstrated that UV light and solar light (300 to 380 nm) photolyzes the HO and that the resulting OH radical reacts with the dye molecules and destroys the chromophore.

Nonisochoric Reactor with Constant Feed Rate of One Component

1993 ◽  
Vol 58 (7) ◽  
pp. 1476-1484
Author(s):  
Václav Dušek ◽  
František Skopal
Keyword(s):  
Sulfuric Acid ◽  
Acid Medium ◽  
Feed Rate ◽  
Redox System ◽  
Chemical Reactor ◽  
Constant Volume ◽  
Rate Equations ◽  
Sulfuric Acid Medium ◽  
Constant Feed Rate

For a chemical reactor with constant volume feed rate equations have been derived which describe the time dependences of concentration of the reaction components, and their approximation has been suggested. The applicability of the approximation has been verified on a model redox system Ce(IV)/V(IV) in sulfuric acid medium.

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

scholarly journals On the Plastic Strain Accumulation in Notched Bars During High-Temperature Creep Dwell

2020 ◽  
Vol 36 (2) ◽  
pp. 167-176 ◽  
Author(s):  
Daniele Barbera ◽  
Haofeng Chen
Keyword(s):  
High Temperature ◽  
Cyclic Loading ◽  
Plastic Strain ◽  
Kinematic Hardening ◽  
High Temperature Creep ◽  
Strain Accumulation ◽  
Material Models ◽  
Cyclic Loading Condition ◽  
Hardening Material ◽  
Temperature Creep

ABSTRACTStructural integrity plays an important role in any industrial activity, due to its capability of assessing complex systems against sudden and unpredicted failures. The work here presented investigates an unexpected new mechanism occurring in structures subjected to monotonic and cyclic loading at high temperature creep condition. An unexpected accumulation of plastic strain is observed to occur, within the high-temperature creep dwell. This phenomenon has been observed during several full inelastic finite element analyses. In order to understand which parameters make possible such behaviour, an extensive numerical study has been undertaken on two different notched bars. The notched bar has been selected due to its capability of representing a multiaxial stress state, which is a practical situation in real components. Two numerical examples consisting of an axisymmetric v-notch bar and a semi-circular notched bar are considered, in order to investigate different notches severity. Two material models have been considered for the plastic response, which is modelled by both Elastic-Perfectly Plastic and Armstrong-Frederick kinematic hardening material models. The high-temperature creep behaviour is introduced using the time hardening law. To study the problem several results are presented, as the effect of the material model on the plastic strain accumulation, the effect of the notch severity and the mesh element type and sensitivity. All the findings further confirm that the phenomenon observed is not an artefact but a real mechanism, which needs to be considered when assessing off-design condition. Moreover, it might be extremely dangerous if the cyclic loading condition occurs at such a high loading level.

Rate equations for positronium formation at metal surfaces

1980 ◽  
Vol 35 (10) ◽  
pp. 781-784 ◽  
Author(s):  
H.J. Kreuzer ◽  
D.N. Lowy ◽  
Z.W. Gortel
Keyword(s):  
Metal Surfaces ◽  
Positronium Formation ◽  
Rate Equations
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