scholarly journals Technical Note: Consistency of PTW30013 and FC65‐G ion chamber magnetic field correction factors

2019 ◽  
Vol 46 (8) ◽  
pp. 3739-3745
Author(s):  
S. J. Woodings ◽  
B. Asselen ◽  
T. L. Soest ◽  
L. A. Prez ◽  
J. J. W. Lagendijk ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Technical Note ◽  
Correction Factors ◽  
Ion Chamber

scholarly journals OC-0290 Consistency of PTW30013 and FC65-G ion chamber magnetic field correction factors

2019 ◽  
Vol 133 ◽  
pp. S144-S145
Author(s):  
S. Woodings ◽  
B. Van Asselen ◽  
T. Van Soest ◽  
L. De Prez ◽  
J. Lagendijk ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Correction Factors ◽  
Ion Chamber

Technical Note: Ion chamber angular dependence in a magnetic field

2017 ◽  
Vol 44 (8) ◽  
pp. 4322-4328 ◽  
Author(s):  
Michael Reynolds ◽  
Satyapal Rathee ◽  
B. Gino Fallone
Keyword(s):  
Magnetic Field ◽  
Angular Dependence ◽  
Technical Note ◽  
Ion Chamber

scholarly journals Technical Note: A Monte Carlo study of magnetic-field-induced radiation dose effects in mice

2015 ◽  
Vol 42 (9) ◽  
pp. 5510-5516 ◽  
Author(s):  
Ashley E. Rubinstein ◽  
Zhongxing Liao ◽  
Adam D. Melancon ◽  
Michele Guindani ◽  
David S. Followill ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Monte Carlo ◽  
Radiation Dose ◽  
Monte Carlo Study ◽  
Technical Note ◽  
Dose Effects

OC-0194 Monte Carlo determination of magnetic field correction factors kB,Q for dosimetry in 1.5T MR-Linacs

2021 ◽  
Vol 161 ◽  
pp. S123-S124
Author(s):  
V. Margaroni ◽  
E.P. Pappas ◽  
A. Episkopakis ◽  
P. Karaiskos
Keyword(s):  
Magnetic Field ◽  
Monte Carlo ◽  
Correction Factors

scholarly journals Correcting the geomagnetic IHV index of the Eskdalemuir observatory

2006 ◽  
Vol 24 (12) ◽  
pp. 3411-3419 ◽  
Author(s):  
D. Martini ◽  
K. Mursula
Keyword(s):  
Magnetic Field ◽  
Data Center ◽  
Early Years ◽  
Correction Factors ◽  
Hourly Data ◽  
The World ◽  
Variability Index ◽  
The Magnetic Field ◽  
Long Term Studies

Abstract. We study here the recently proposed measure of local geomagnetic activity called the IHV (Inter-Hour Variability) index calculated for the Eskdalemuir (ESK) station. It was found earlier that the ESK IHV index depicts an artificial, step-like increase from 1931 to 1932. We show here that this increase is due to the fact that the values of the magnetic field components of the ESK observatory stored at the World Data Center are two-hour running averages of hourly data stored in ESK yearbooks. Two-hour averaging greatly reduces the variability of the data which leads to artificially small values of the IHV index in 1911–1931. We also study the effect of two-hour averaging upon hourly mean and spot values using 1-minute data available for recent years, and calculate the correction factors for the early years, taking into account the weak dependence of correction factors on solar activity. Using these correction factors, we correct the ESK IHV indices in 1912–1931, and revise the estimate of the centennial change based on them. The effect of correction is very significant: the centennial increase in the ESK IHV-raw (IHV-cor) index in 1912–2000 changes from 73.9% (134.4%) before correction to 10.3% (25.3%) thereafter, making the centennial increase at ESK quite similar to other mid-latitude stations. Obviously, earlier long-term studies based on ESK IHV values are affected by the correction and need to be revised. These results also strongly suggest that the ESK yearbook data should be digitized and the hourly ESK data at WDC should be replaced by them.

Low-temperature Preparation of Crystallized Zirconia Films by ECR Plasma MOCVD

2005 ◽  
Vol 890 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Low Temperatures ◽  
Monoclinic Zirconia ◽  
High Quality ◽  
Ion Chamber ◽  
Ecr Plasma ◽  
Low Temperature Preparation ◽  
Oxide Ion ◽  
Zirconia Films

ABSTRACTIt is known that zirconia has excellent thermal and chemical stability, and oxide ion conduction. Therefore, YSZ is expected to be used as oxide ion conducting materials, optical mirror materials, catalytic materials and heat-resistant materials. Zirconia films have been fabricated by PVD (ex. sputtering and laser-ablation), chemical vapor deposition (CVD) and sol-gel methods. CVD is capable to prepare high quality zirconia films with excellent conformal coverage; however, deposition temperature of conventional CVD was usually high than PVD. On the other hand, an electron cyclotron resonance (ECR) plasma is high-activity plasma and high quality crystalline films can be obtained at low temperature by using ECR plasma. In the present study, zirconia thin films were prepared at low temperatures on quartz, polycarbonate and polyimide substrates by ECR plasma MOCVD.Zr-hexafluoroacetylacetonato solution was used as a precursor. The source, which was placed in a glass bubbler, was carried into a reactor by Ar gas. A microwave (2.45 GHz, 500 W) was introduced into the ion chamber through a rectangular wave guide. A magnetic field (875 Gauss) was applied to the ion chamber to satisfy the ECR condition. A mirror-type magnetic field (450 Gauss at the substrate stage) was applied in order to raise a plasma density, which results in an increase of the deposition rates of films. Substrate temperature (Ts) was from 30 to 700 C by water-cooling holder and infrared lamp heater. Microwave power was changed from 0 to 900 W. The deposition time was from 30 to 120 minutes.Cubic, monoclinic and tetragonal zirconia films were obtained over Ts=400 C, and cubic and monoclinic zirconia films were obtained below Ts= C. Cubic and monoclinic zirconia films were also obtained at no heating. The deposition rate increased from 10 to 20 nm/min with increasing Ts from no heating to 600 C. Crystallized zirconia films were obtained on polycarbonate and polyimide substrates at no heating. The ECR plasma was significantly effective to prepare crystallized zirconia films at low temperatures.

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