Strain effects on refractive index and confinement factor of InxGa(1−x)As laser diodes

1994 ◽  
Vol 7 (3) ◽  
pp. 113-119 ◽  
Author(s):  
H. Ghafouri-Shiraz ◽  
S. Tsuji
Keyword(s):  
Refractive Index ◽  
Laser Diodes ◽  
Strain Effects

Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser Diodes with Real Refractive Index Guided Self-Aligned Structure

2001 ◽  
Vol 40 (Part 1, No. 11) ◽  
pp. 6401-6405 ◽  
Author(s):  
Toshikazu Onishi ◽  
Osamu Imafuji ◽  
Toshiya Fukuhisa ◽  
Atsunori Mochida ◽  
Yasuhiro Kobayashi ◽  
...  
Keyword(s):  
Refractive Index ◽  
Laser Diodes ◽  
Dual Wavelength ◽  
Monolithically Integrated ◽  
Real Refractive Index

Low operating current self‐sustained pulsation GaAlAs laser diodes with a real refractive index guided structure

1994 ◽  
Vol 65 (10) ◽  
pp. 1211-1212 ◽  
Author(s):  
T. Takayama ◽  
O. Imafuji ◽  
H. Sugiura ◽  
M. Yuri ◽  
H. Naito ◽  
...  
Keyword(s):  
Refractive Index ◽  
Laser Diodes ◽  
Operating Current ◽  
Real Refractive Index

120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure

1996 ◽  
Vol 35 (Part 2, No. 4B) ◽  
pp. L493-L495 ◽  
Author(s):  
Toru Takayama ◽  
Osamu Imafuji ◽  
Tadaro Hashimoto ◽  
Masaaki Yuri ◽  
Akio Yoshikawa ◽  
...  
Keyword(s):  
Refractive Index ◽  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Noise ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser ◽  
Real Refractive Index

scholarly journals Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7364
Author(s):  
Dario Schiavon ◽  
Robert Mroczyński ◽  
Anna Kafar ◽  
Grzegorz Kamler ◽  
Iryna Levchenko ◽  
...  
Keyword(s):  
Refractive Index ◽  
Gallium Nitride ◽  
Production Process ◽  
Laser Diodes ◽  
Index Of Refraction ◽  
Aluminium Gallium Nitride ◽  
Process Yield ◽  
Index Contrast ◽  
Cladding Layers ◽  
Lattice Matched

Gallium nitride (GaN) doped with germanium at a level of 1020 cm−3 is proposed as a viable material for cladding layers in blue- and green-emitting laser diodes. Spectral reflectometry and ellipsometry are used to provide evidence of a reduced index of refraction in such layers. The refractive-index contrast to undoped GaN is about 0.990, which is comparable to undoped aluminium gallium nitride (AlGaN) with an aluminium composition of 6%. Germanium-doped GaN layers are lattice-matched to native GaN substrates; therefore, they introduce no strain, cracks, and wafer bowing. Their use, in place of strained AlGaN layers, will enable significant improvements to the production process yield.

Reduction of Beam Divergence Angle by Low-Refractive-Index Layers Introduced to Real-Refractive-Index-Guided GaAlAs High-Power Laser Diodes

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2676-2680 ◽  
Author(s):  
Tadao Hashimoto ◽  
Osamu Imafuji ◽  
Toru Takayama ◽  
Masaaki Yuri ◽  
Akio Yoshikawa ◽  
...  
Keyword(s):  
Refractive Index ◽  
High Power ◽  
Laser Diodes ◽  
Beam Divergence ◽  
Divergence Angle ◽  
High Power Laser ◽  
Power Laser ◽  
Beam Divergence Angle ◽  
Real Refractive Index ◽  
Low Refractive Index
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