High-speed quantum-well interferometric modulators for InP-based photonic integrated circuits (invited paper)

1993 ◽  
Vol 6 (1) ◽  
pp. 6-14 ◽  
Author(s):  
J. E. Zucker
Keyword(s):  
Integrated Circuits ◽  
Quantum Well ◽  
High Speed ◽  
Photonic Integrated Circuits

scholarly journals High-speed photodiodes for InP-based photonic integrated circuits

2012 ◽  
Vol 20 (8) ◽  
pp. 9172 ◽  
Author(s):  
E. Rouvalis ◽  
M. Chtioui ◽  
M. Tran ◽  
F. Lelarge ◽  
F. van Dijk ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Photonic Integrated Circuits

Multiple-quantum-well photonic integrated circuits for pulse generation at 1-10GHz repetition rates

1992 ◽  
Author(s):  
Per B. Hansen ◽  
Uziel Koren ◽  
Gregory Raybon ◽  
Barry I. Miller ◽  
Martin G. Young ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Quantum Well ◽  
Photonic Integrated Circuits ◽  
Multiple Quantum Well ◽  
Pulse Generation ◽  
Multiple Quantum

QUANTUM WELL OPTOELECTRONIC SWITCHING DEVICES

1990 ◽  
Vol 01 (01) ◽  
pp. 19-46 ◽  
Author(s):  
D.A.B. MILLER
Keyword(s):  
Integrated Circuits ◽  
Quantum Well ◽  
High Speed ◽  
Free Space Optics ◽  
Optical Logic ◽  
Optical Modulators ◽  
Space Optics ◽  
Good Potential ◽  
Parallel Arrays ◽  
Optoelectronic Switching

Quantum well semiconductor structures allow small, fast, efficient optoelectronic devices such as optical modulators and switches. These are capable of logic themselves and have good potential for integration with electronic integrated circuits for parallel high speed interconnections. Devices can be made both in waveguides and two-dimensional parallel arrays. Working arrays of optical logic and memory devices have been demonstrated, to sizes as large as 2 048 elements, all externally accessible in parallel with free-space optics. This article gives an overview of the physics underlying the operation of such devices, and describes the principles of several of the device types, including self-electrooptic effect devices (SEEDs).

scholarly journals Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz

2021 ◽  
Author(s):  
S. Lischke ◽  
A. Peczek ◽  
J. S. Morgan ◽  
K. Sun ◽  
D. Steckler ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
State Of The Art ◽  
Photonic Integrated Circuits ◽  
Bandwidth Efficiency ◽  
Novel Device ◽  
Silicon Devices ◽  
Performance Specifications ◽  
Dark Currents

AbstractOn a scalable silicon technology platform, we demonstrate photodetectors matching or even surpassing state-of-the-art III–V devices. As key components in high-speed optoelectronics, photodetectors with bandwidths greater than 100 GHz have been a topic of intense research for several decades. Solely InP-based detectors could satisfy the highest performance specifications. Devices based on other materials, such as germanium-on-silicon devices, used to lag behind in speed, but enabled complex photonic integrated circuits and co-integration with silicon electronics. Here we demonstrate waveguide-coupled germanium photodiodes with optoelectrical 3-dB bandwidths of 265 GHz and 240 GHz at a photocurrent of 1 mA. This outstanding performance is achieved by a novel device concept in which a germanium fin is sandwiched between complementary in situ-doped silicon layers. Our photodetectors show internal responsivities of 0.3 A W−1 (265 GHz) and 0.45 A W−1 (240 GHz) at a wavelength of 1,550 nm. The internal bandwidth–efficiency product of the latter device is 86 GHz. Low dark currents of 100–200 nA are obtained from these ultra-fast photodetectors.

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