An improved transistor noise equivalent circuit model for silicon‐on‐insulator transistors considering the frequency dispersion effect

2021 ◽  
Author(s):  
Xingzheng Du ◽  
Xin Cao ◽  
Huihua Liu
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Frequency Dispersion ◽  
Circuit Model ◽  
Silicon On Insulator ◽  
Dispersion Effect ◽  
Noise Equivalent Circuit

scholarly journals Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

2021 ◽  
Author(s):  
Yasuhisa Omura
Keyword(s):  
Oxide Film ◽  
Equivalent Circuit ◽  
Resistive Switching ◽  
Silicon Oxide ◽  
Equivalent Circuit Model ◽  
Frequency Dispersion ◽  
Circuit Model ◽  
Conductive Filament ◽  
Silicon Oxide Film ◽  
Sputter Deposited

Abstract Based on the results of experiments on the resistive switching behaviors of sputter-deposited silicon oxide films, this paper proposes a possible equivalent circuit model to characterize the switching behavior. It is revealed that frequency dispersion of the conductance component and capacitance component in the equivalent circuit model dominate the physical interpretation of the frequency-dependence of the components. The validity of the model and its physical interpretation are examined based on a theoretical model of the dielectric function of the conductive filament region. The polarizability of the conductive filament region suggests that the capacitance component of the conductive filament is insensitive to frequency in the low frequency range, whereas the conductance component of the conductive filament is proportional to frequency in the low frequency range. These theoretical results match experimental findings, and it is revealed that the equivalent circuit models and the frequency dispersion models for the capacitance and conductance component of the silicon oxide film are acceptable. In addition, this paper reveals the importance of the sub-oxide region and the Si precipitate region in determining the resistive switching behaviors of sputter-deposited silicon oxide film.

The noise equivalent circuit model of quantum-dot lasers

2012 ◽  
Vol 33 (3) ◽  
pp. 217-226 ◽  
Author(s):  
Ashkan Horri ◽  
Seyedeh Zahra Mirmoeini ◽  
Rahim Faez
Keyword(s):  
Quantum Dot ◽  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Quantum Dot Lasers ◽  
Noise Equivalent Circuit

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

2012 ◽  
Vol 132 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Satoshi Maruyama ◽  
Muneki Nakada ◽  
Makoto Mita ◽  
Takuya Takahashi ◽  
Hiroyuki Fujita ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Pulse Width ◽  
Pulse Width Modulation ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Comb Drive ◽  
Optical Scanner

scholarly journals A Novel, Improved Equivalent Circuit Model for Double-Sided Linear Induction Motor

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1644
Author(s):  
Qian Zhang ◽  
Huijuan Liu ◽  
Tengfei Song ◽  
Zhenyang Zhang
Keyword(s):  
Finite Element ◽  
Finite Element Model ◽  
Equivalent Circuit ◽  
Skin Effect ◽  
Equivalent Circuit Model ◽  
Element Model ◽  
Circuit Model ◽  
End Effects ◽  
3D Finite Element ◽  
Linear Induction

A novel, improved equivalent circuit model of double-sided linear induction motors (DLIMs) is proposed, which takes the skin effect and the nonzero leakage reactance of the secondary, longitudinal, and transverse end effects into consideration. Firstly, the traditional equivalent circuit with longitudinal and transverse end effects are briefly reviewed. Additionally, the correction coefficients for longitudinal and transverse end effects derived by one-dimensional analysis models are given. Secondly, correction factors for skin effect, which reflects the inhomogeneous air gap magnetic field vertically, and the secondary leakage reactance are derived by the quasi-two-dimensional analysis model. Then, the proposed equivalent circuit is presented, and the excitation reactance and secondary resistance are modified by the correction coefficients derived from the three analytical models. Finally, a three-dimensional (3D) finite element model is used to verify the proposed equivalent circuit model under varying air gap width and frequency, and the results are also compared with that of the traditional equivalent circuit models. The calculated thrust characteristics by the proposed equivalent circuit and 3D finite element model are experimentally validated under a constant voltage–frequency drive.

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