Microwave dielectric measurements of fibrous catalyst using transmission line technique in the frequency range of 1-4 GHz

2014 ◽  
Vol 56 (11) ◽  
pp. 2671-2676 ◽  
Author(s):  
Adam Aboutaleb ◽  
George Chi-Tangyie ◽  
Katherine Huddersman ◽  
Chris H Oxley
Keyword(s):  
Transmission Line ◽  
Dielectric Measurements ◽  
Frequency Range ◽  
Microwave Dielectric

Dielectric Measurements On Printed-Wiring And Circuit Boards, Thin Films, And Substrates: An Overview

1995 ◽  
Vol 381 ◽  
Author(s):  
James Baker-Jarvis ◽  
Chriss A. Jones
Keyword(s):  
Thin Films ◽  
Surface Wave ◽  
Transmission Line ◽  
Dielectric Resonators ◽  
Circuit Boards ◽  
Dielectric Measurements ◽  
Frequency Range ◽  
Permittivity Measurements ◽  
Open Resonators ◽  
Wave Modes

AbstractA review of the most common methods of permittivity measurements on thin films, printed-wiring and circuit boards, and substrates is presented. Transmission-line techniques, coaxial apertures, open resonators, surface-wave modes, and dielectric resonators methods are examined. The frequency range of applicability and typical uncertainties associated with the methods are summarized.

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

Mechanical and Microwave Dielectric Properties of Csf/Si3N4 Composites

2007 ◽  
Vol 546-549 ◽  
pp. 1661-1664
Author(s):  
Xiao Yan Wang ◽  
Fa Luo ◽  
Dong Mei Zhu ◽  
Wan Cheng Zhou ◽  
Hong Huan Wu
Keyword(s):  
Carbon Fibers ◽  
Microwave Dielectric Properties ◽  
Xrd Analysis ◽  
Network Analyzer ◽  
Hot Press ◽  
Frequency Range ◽  
The Real ◽  
Microwave Dielectric ◽  
Hot Press Sintering ◽  
Sintering Method

Csf/Si3N4 composites were prepared by hot-press sintering method using α-Si3N4 power, short chopping carbon-fiber and sintering additives. XRD analysis showed that the α-Si3N4 was almost completely transferred into β-Si3N4. The SEM micrographs of fractured surfaces showed that special network developed by rod-like β- Si3N4 grains. The flexure strength of 590±10MPa, and fracture toughness of 7.94±0.1MPa·m1/2 were achieved for the samples incorporated with 0.5wt% the carbon fibers .The microwave dielectric property of Csf/Si3N4 composites was measured at a frequency range of 8.2~18GHz by E8362B PNA series network analyzer. The real part (ε ′ ) of the permittivity of the Csf/Si3N4 composites increases from 10 to 58 with the rise of the content of carbon fibers in the composites, as well as the imaginary part increases from 0.03 to 98 at frequency of 9.375GHz. A strong frequency dependence of the real part was observed both in X and Ku bands.

Polaron conduction loss in microwave dielectric ceramics

1999 ◽  
Vol 14 (2) ◽  
pp. 500-502
Author(s):  
Seungbum Hong ◽  
Eunah Kim ◽  
Han Wook Song ◽  
Jongwan Choi ◽  
Dae-Weon Kim ◽  
...  
Keyword(s):  
Quality Factor ◽  
Phonon Scattering ◽  
Dielectric Resonators ◽  
Frequency Range ◽  
Conduction Loss ◽  
Microwave Dielectric ◽  
Scattering Effects ◽  
Unloaded Quality Factor ◽  
Dielectric Ceramics ◽  
Polaron Conduction

It has been generally accepted that the product of the unloaded quality factor and resonant frequency is the universal parameter for comparison of dielectric resonators with different size.1,2 However, it is suggested in this study that this universal parameter should be modified due to the presence of the polarons. From the frequency dependence of the unloaded quality factor, it is possible to extract the factor determined only by the phonon scattering effects, and we denoted this parameter by Qs. It was found that the Qs parameter for ZrxSnzTiyO4 (ZST) and Ba(Zn1/3Ta2/3)O3 (BZT) ceramics showed constancy in the frequency range of 2–12 GHz, which supports the idea of polaron conduction loss contribution to the dielectric loss.

Calibration of a coaxial antenna-probe for microwave dielectric measurements

2007 ◽  
Vol 50 (4) ◽  
pp. 425-428 ◽  
Author(s):  
A. I. Mekhannikov ◽  
A. V. Myl’nikov ◽  
L. P. Maslennikova
Keyword(s):  
Dielectric Measurements ◽  
Microwave Dielectric

scholarly journals Broadband transmission-line illusions based on transformation electromagnetic

2019 ◽  
Vol 6 ◽  
pp. 23
Author(s):  
Tsutomu Nagayama ◽  
Atsushi Sanada
Keyword(s):  
Transmission Line ◽  
Incident Angle ◽  
Near Field ◽  
Homogeneous Medium ◽  
Field Measurements ◽  
Dielectric Substrate ◽  
Frequency Range ◽  
Microwave Frequencies ◽  
Intrinsic Nature ◽  
Line Technology

We demonstrate broadband transmission-line illusions based on transformation electromagnetics at microwave frequencies by using the distributed full-tensor anisotropic medium. Due to an intrinsic nature of the non-resonant unit cell of the medium, the illusions operate from DC to an upper limit frequency where the homogeneous medium approximation holds. Two-dimensional groove and bump illusion media mimicking scattered waves by an original groove and a bump are designed. Their broadband and incident angle independent operations are confirmed by circuit simulations. The groove illusion medium is implemented on a dielectric substrate with microstrip-line technology, and it is confirmed experimentally by near-field measurements that the illusion medium well mimics scattered waves by the original groove in the broadband frequency range from 2.60 GHz to 4.65 GHz.

Effect of Sintering Temperature on Dielectric Properties of CaCu3Ti4O12 Ceramics Prepared by Mechanochemical Process

2014 ◽  
Vol 974 ◽  
pp. 157-161
Author(s):  
Masturah Mohamed ◽  
Mahesh Talari ◽  
Mohd Salleh Mohd Deni ◽  
Azlan Zakaria
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Sintering Temperature ◽  
Processing Conditions ◽  
Dielectric Measurements ◽  
Frequency Range ◽  
Grain Sizes ◽  
Barrier Capacitance ◽  
Different Temperatures ◽  
Increasing Temperature

CaCu3Ti4O12(CCTO) is well known to have colossal dielectric constant in the range of 105.It is widely accepted that this phenomenon may be attributed to internal layer barrier capacitance (IBLC) model. The dielectric properties of CCTO were reported to be strongly dependent on the processing conditions and grain size. In this work, CCTO samples with different grain sizes were produced by varying sintering temperature in order to investigate IBLC effect on dielectric properties of CCTO. The samples were sintered at four different temperatures, (T=1100°C, 1050°C, 1000°C and 950°C). Dielectric measurements were carried out for the samples in the frequency range of 102– 106Hz using impedance spectrometer. Electron micrographs showed that increasing temperature promoted the grain growth of CCTO while sintering. The internal crystalline defects are seen to play major role by increasing the grain conductivity in dipole formation and increased the dielectric constant of the samples.

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