scholarly journals Triple-pass-band, dual-stop-band UWB antenna with substrate-integrated waveguide resonators

2014 ◽  
Vol 56 (6) ◽  
pp. 1265-1270 ◽  
Author(s):  
Qianqian Wang ◽  
Jens Bornemann
Keyword(s):  
Stop Band ◽  
Pass Band ◽  
Substrate Integrated Waveguide ◽  
Uwb Antenna ◽  
Waveguide Resonators

Novel Low-Pass Microwave Filter Based on Rectangular Ring DGS

2013 ◽  
Vol 273 ◽  
pp. 371-374
Author(s):  
Bao Ping Li ◽  
Yan Liang Zhang
Keyword(s):  
Stop Band ◽  
Center Frequency ◽  
Pass Band ◽  
Band Pass Filter ◽  
Defected Ground Structure ◽  
Ground Structure ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Compact Size ◽  
Low Pass

Due to the frequency response periodicity of distributed transmission line, microstrip band-pass filter usually produces parasitic pass-band and outputs harmonics away from the center frequency of main pass-band. Based on the study of rectangular ring defected ground structure, a 5-order microstrip LPF(low-pass filter) was designed using the single-pole band-stop and slow-wave characteristics of the rectangular ring DGS(Defected Ground Structure) and SISS(Step-Impedance Shunt Stub) structure. Compared with traditional LPF, this LPF presents the advantages of compact size, low insertion loss, broad stop-band and high steep. It also validates the requirements of miniaturization and high performance for filters.

Design and Simulation of Switched Capacitor Filter for Speed Change Parameter Converter

2013 ◽  
Vol 562-565 ◽  
pp. 1132-1136
Author(s):  
Xiao Wei Liu ◽  
Jian Yang ◽  
Song Chen ◽  
Liang Liu ◽  
Rui Zhang ◽  
...  
Keyword(s):  
Stop Band ◽  
Cutoff Frequency ◽  
Rapid Change ◽  
Pass Band ◽  
Cmos Process ◽  
Switched Capacitor ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
The Time Domain

In this paper, we design a high-order switched capacitor filter for rapid change parameter converter. This design uses a structure which consists of three biquads filter sub-units. The design is a 6th-order SC elliptic low-pass filter, and the sample frequency is 250 kHz. By the MATLAB Simulink simulation, the system can meet the design requirements in the time domain. In this paper, the 6th-order switched capacitor elliptic low-pass filter was implemented under 0.5 um CMOS process and simulated in Cadence. The final simulation results show that the pass-band cutoff frequency is 10 kHz, and the maximum pass-band ripple is about 0.106 dB. The stop-band cutoff frequency is 20 kHz, and the minimum stop-band attenuation is 74.78 dB.

A Multichannel Filter Based on the Finite Plasma Photonic Crystal

2013 ◽  
Vol 538 ◽  
pp. 297-300 ◽  
Author(s):  
Chien Jang Wu ◽  
Ya Ju Lee ◽  
Tzu Chyang King ◽  
Wen Kai Kuo
Keyword(s):  
Photonic Crystal ◽  
Plasma Layer ◽  
Dielectric Material ◽  
Stop Band ◽  
Pass Band ◽  
Multiple Channels ◽  
Photonic Stop Band ◽  
Multichannel Filter ◽  
Plasma Photonic Crystal ◽  
Transmission Filter

A design of multichannel transmission filter at microwave is proposed. It is based on the use of the finite plasma photonic crystal operating at frequency below the plasma frequency. We consider a design structures of (AB)qA, where A is the dielectric material, B is the plasma layer, and q is the number of periods. It is found that the number of channels is equal to q-1. We show that the locations such multiple channels are in the pass band of the infinite plasma-dielectric photonic crystal. The idea of such design is thus to engineer the photonic pass band, which is fundamentally different from the usual design by engineering the photonic stop band like the multilayer Fabry-Perot transmission filter. The physical mechanism of multiple channels is also discussed.

Surface acoustic wave devices fabricated on epitaxial AlN film

2016 ◽  
Vol 09 (02) ◽  
pp. 1650034 ◽  
Author(s):  
Junning Gao ◽  
Zhibiao Hao ◽  
Lang Niu ◽  
Lai Wang ◽  
Changzheng Sun ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Epitaxial Film ◽  
Stop Band ◽  
Crystalline Quality ◽  
Center Frequency ◽  
Pass Band ◽  
Saw Devices ◽  
Aln Film

This paper reports surface acoustic wave (SAW) devices fabricated on AlN epitaxial film grown on sapphire, aiming to avoid the detrimental polarization axis inconsistency and refrained crystalline quality of the normally used polycrystalline AlN films. Devices with center frequency of 357 MHz and 714 MHz have been fabricated. The stop band rejection ratio of the as-obtained device reaches 24.5 dB and the pass band ripple is profoundly smaller compared to most of the reported AlN SAW devices with the similar configuration. Judging from the rather high edge dislocation level of the film used in this study, the properties of the SAW devices have great potential to be improved by further improving the crystalline quality of the film. It is then concluded that the AlN epitaxial film is favorable for high quality SAW devices to meet the high frequency and low power consumption challenges facing the signal processing components.

Millimeter-Wave Printed Circuit Board Characterization Using Substrate Integrated Waveguide Resonators

2012 ◽  
Vol 60 (10) ◽  
pp. 3300-3308 ◽  
Author(s):  
Dmitry E. Zelenchuk ◽  
Vincent Fusco ◽  
George Goussetis ◽  
Antonio Mendez ◽  
David Linton
Keyword(s):  
Millimeter Wave ◽  
Printed Circuit Board ◽  
Circuit Board ◽  
Substrate Integrated Waveguide ◽  
Printed Circuit ◽  
Waveguide Resonators

scholarly journals Miniaturized Bandpass Filters With Double-Folded Substrate Integrated Waveguide Resonators in LTCC

2009 ◽  
Vol 57 (7) ◽  
pp. 1774-1782 ◽  
Author(s):  
Hung-Yi Chien ◽  
Tze-Min Shen ◽  
Ting-Yi Huang ◽  
Wei-Hsin Wang ◽  
Ruey-Beei Wu
Keyword(s):  
Bandpass Filters ◽  
Substrate Integrated Waveguide ◽  
Waveguide Resonators
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