60 GHz high resistivity silicon on insulator interdigitated dipole antenna

2010 ◽  
Vol 52 (5) ◽  
pp. 1197-1201 ◽  
Author(s):  
M. H. Barakat ◽  
C. Delaveaud ◽  
F. Ndagijimana
Keyword(s):  
Dipole Antenna ◽  
Silicon On Insulator ◽  
High Resistivity ◽  
60 Ghz ◽  
High Resistivity Silicon

Radiation measurement of 60 GHz high resistivity silicon on insulator double slot antenna

2011 ◽  
Vol 53 (12) ◽  
pp. 2861-2865 ◽  
Author(s):  
Moussa H. Barakat ◽  
Christophe Delaveaud ◽  
Fabien Ndagijimana
Keyword(s):  
Silicon On Insulator ◽  
Slot Antenna ◽  
High Resistivity ◽  
Radiation Measurement ◽  
60 Ghz ◽  
High Resistivity Silicon

Beamforming Lens Antenna on a High Resistivity Silicon Wafer for 60 GHz WPAN

2010 ◽  
Vol 58 (3) ◽  
pp. 706-713 ◽  
Author(s):  
Woosung Lee ◽  
Jaeheung Kim ◽  
Choon Sik Cho ◽  
Young Joong Yoon
Keyword(s):  
Silicon Wafer ◽  
High Resistivity ◽  
60 Ghz ◽  
Lens Antenna ◽  
High Resistivity Silicon

Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

1993 ◽  
Vol 40 (4) ◽  
pp. 753-758 ◽  
Author(s):  
B. Dierickx ◽  
D. Wouters ◽  
G. Willems ◽  
A. Alaerts ◽  
I. Debusschere ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
High Resistivity ◽  
Particle Detector ◽  
High Resistivity Silicon

scholarly journals Influence of Substrate Material on Radiation Characteristics of THz Photoconductive Emitters

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Jens Klier ◽  
Garik Torosyan ◽  
Nina Susan Schreiner ◽  
Daniel Molter ◽  
Frank Ellrich ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature ◽  
Radiation Pattern ◽  
Strong Dependence ◽  
Dipole Antenna ◽  
Substrate Material ◽  
High Resistivity ◽  
Influence Of Substrate ◽  
Broadband Detection ◽  
High Resistivity Silicon

We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material. All antenna structures were lithographically fabricated on low-temperature (LT) grown, few-micrometers-thick gallium arsenide (GaAs) layers. To investigate the effect of the substrate material on the radiation pattern of terahertz beams, either semi-insulating gallium arsenide or high-resistivity silicon substrate wafers have been used. As detector a standard 40 µm long dipole antenna on a semi-insulating GaAs substrate with a low-temperature grown gallium arsenide layer on it has been employed; this configuration allows for broadband detection and is still efficient enough for the characterization purpose. Strong dependence of the radiation pattern on the substrate used for the terahertz source is demonstrated. The measured patterns and differences between the two cases of substrates are well explained by means of classical diffraction.

JFET FOR COMPLETELY DEPLETED HIGH RESISTIVITY SILICON

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-363-C4-366 ◽  
Author(s):  
V. RADEKA ◽  
P. REHAK ◽  
S. RESCIA ◽  
E. GATTI ◽  
A. LONGONI ◽  
...  
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon
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