60-GHz bandpass filter with ACMRC resonator fabricated using 0.18-μm CMOS technology

2009 ◽  
Vol 51 (3) ◽  
pp. 597-600 ◽  
Author(s):  
Chia-Hsieh Liu ◽  
Cheng-Ying Hsu ◽  
Chu-Yu Chen ◽  
Huey-Ru Chuang
Keyword(s):  
Bandpass Filter ◽  
Cmos Technology ◽  
60 Ghz

Miniature 60-GHz-band bandpass filter with 2.55-dB insertion-loss using standard 0.13 μm CMOS technology

2009 ◽  
Vol 51 (7) ◽  
pp. 1632-1635 ◽  
Author(s):  
Mei-Ching Lu ◽  
Jin-Fa Chang ◽  
Li-Chun Lu ◽  
Yo-Sheng Lin
Keyword(s):  
Insertion Loss ◽  
Bandpass Filter ◽  
Cmos Technology ◽  
60 Ghz

A 60-GHz Millimeter-Wave Bandpass Filter Using 0.18-$\mu\hbox{m}$ CMOS Technology

2008 ◽  
Vol 29 (3) ◽  
pp. 246-248 ◽  
Author(s):  
Hsu Cheng-Ying ◽  
Chen Chu-Yu ◽  
Chuang Huey-Ru
Keyword(s):  
Millimeter Wave ◽  
Bandpass Filter ◽  
Cmos Technology ◽  
60 Ghz

A 60 GHz flip-chip bandpass filter in standard CMOS technology

2010 ◽  
Author(s):  
Debin Hou ◽  
Yong-Zhong Xiong ◽  
Ying-Ying Lim ◽  
Wang Ling Goh ◽  
Jiankang Li ◽  
...  
Keyword(s):  
Flip Chip ◽  
Bandpass Filter ◽  
Cmos Technology ◽  
60 Ghz

Miniaturised 60 GHz rectangular ring bandpass filter in 90 nm CMOS technology

2011 ◽  
Vol 47 (7) ◽  
pp. 448 ◽  
Author(s):  
H.-C. Lu ◽  
C.-S. Yeh ◽  
S.-A. Wei
Keyword(s):  
Bandpass Filter ◽  
Cmos Technology ◽  
60 Ghz

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

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