Size reduction of microwave and millimeter‐wave passive circuits by UC‐PBG in standard 0.18‐μm CMOS technology

2008 ◽  
Vol 50 (9) ◽  
pp. 2251-2254 ◽  
Author(s):  
Shuiyang Lin ◽  
Liwu Yang ◽  
Xiaowei Sun
Keyword(s):  
Millimeter Wave ◽  
Cmos Technology ◽  
Size Reduction ◽  
Passive Circuits

scholarly journals Toward a fully integrated automotive radar system-on-chip in 22 nm FD-SOI CMOS

2021 ◽  
pp. 1-9
Author(s):  
Philipp Ritter
Keyword(s):  
Millimeter Wave ◽  
Flip Chip ◽  
Printed Circuit Board ◽  
Digital Signal ◽  
Cmos Technology ◽  
Radar System ◽  
Circuit Board ◽  
Processing Unit ◽  
Automotive Radar ◽  
On Chip

Abstract Next-generation automotive radar sensors are increasingly becoming sensitive to cost and size, which will leverage monolithically integrated radar system-on-Chips (SoC). This article discusses the challenges and the opportunities of the integration of the millimeter-wave frontend along with the digital backend. A 76–81 GHz radar SoC is presented as an evaluation vehicle for an automotive, fully depleted silicon-over-insulator 22 nm CMOS technology. It features a digitally controlled oscillator, 2-millimeter-wave transmit channels and receive channels, an analog base-band with analog-to-digital conversion as well as a digital signal processing unit with on-chip memory. The radar SoC evaluation chip is packaged and flip-chip mounted to a high frequency printed circuit board for functional demonstration and performance evaluation.

Flexible and miniaturized power divider

2015 ◽  
Vol 8 (3) ◽  
pp. 547-557 ◽  
Author(s):  
François Burdin ◽  
Florence Podevin ◽  
Philippe Ferrari
Keyword(s):  
Millimeter Wave ◽  
Transmission Lines ◽  
High Performance ◽  
Size Reduction ◽  
Input Port ◽  
Power Divider ◽  
Proof Of Concept ◽  
Millimeter Wave Range ◽  
Measurement Results ◽  
Wave Range

A new flexible and miniaturized power divider (PD), based on the Wilkinson PD topology, is carried out in this paper. Flexibility and size reduction are achieved simultaneously thanks to both an open-stub loading the input port and additional transmission lines (TLines) connecting the output ports to the isolation resistance. Design equations and rules are given. As a proof-of-concept, two PDs working at 2.45 GHz were fabricated and measured. Then, on the basis of the previous developments, a 1:4 power-dividing feeding network was realized. It highlights the high performance and flexibility of the proposed PD. Agreement between simulation and measurement results is very good, for PDs as well as for the feeding network, thus validating the proposed approach. This concept is straightforward to be applied at higher frequencies, in particular in the millimeter-wave range on CMOS technologies, where flexibility in the choice of the TLines characteristic impedances and size reduction are mandatory.

Millimeter wave design with 65 nm LP SOI HR CMOS technology

2007 ◽  
Author(s):  
B. Martineau ◽  
S. Douyere ◽  
A. Cathelin ◽  
F. Danneville ◽  
C. Raynaud ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Cmos Technology
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