1.6 W K-band MMIC power amplifier developed using low loss matching technique for point-to-point radio applications

2007 ◽  
Vol 49 (7) ◽  
pp. 1521-1525 ◽  
Author(s):  
Inder J. Bahl
Keyword(s):  
Power Amplifier ◽  
Low Loss ◽  
Matching Technique ◽  
Point To Point ◽  
K Band

scholarly journals The Design and Life Test of a Multifunction Power Amplifier for Space Application

2016 ◽  
Vol 2016 ◽  
pp. 1-6
Author(s):  
Xiuqin Xu ◽  
Hui Xu ◽  
Yongheng Shang ◽  
Zhiyu Wang ◽  
Yang Wang ◽  
...  
Keyword(s):  
Temperature Effect ◽  
Power Amplifier ◽  
Space Application ◽  
Test Results ◽  
Life Test ◽  
General Performance ◽  
Saturation Region ◽  
Point To Point ◽  
K Band

A new multifunction power amplifier (MFPA) is designed and fabricated for the application of point-to-point K-Band backhaul TR module. A DC temperature life test was performed to model the up-limit temperature effect of the designed MFPA under space application. After 240 hours of 100°C life test, the test results illustrate that the designed MFPA has only slight power degradation at the saturation region without change of the linear gain. The general performance of the designed MFPA satisfies the requirement of the application scenario.

Compact low-loss narrow-band duplexer using low-impedance open-loop resonators for K-band radiometers

2019 ◽  
Vol 90 (5) ◽  
pp. 054705
Author(s):  
Ju Seong Park ◽  
Seung Hyun Min ◽  
Tae Gyu Kim ◽  
Hyun Chul Choi ◽  
Kang Wook Kim
Keyword(s):  
Narrow Band ◽  
Open Loop ◽  
Low Loss ◽  
K Band

A 76–84 GHz SiGe Power Amplifier Array Employing Low-Loss Four-Way Differential Combining Transformer

2013 ◽  
Vol 61 (2) ◽  
pp. 931-938 ◽  
Author(s):  
Mury Thian ◽  
Marc Tiebout ◽  
Neil B. Buchanan ◽  
Vincent F. Fusco ◽  
Franz Dielacher
Keyword(s):  
Power Amplifier ◽  
Low Loss

scholarly journals X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1312 ◽  
Author(s):  
Chen Jin ◽  
Yuan Gao ◽  
Wei Chen ◽  
Jianhua Huang ◽  
Zhiyu Wang ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Integrated Circuit ◽  
High Efficiency ◽  
Second Harmonic ◽  
Power Added Efficiency ◽  
Optimum Load ◽  
Measurement Results ◽  
Class B ◽  
Point To Point ◽  
Output Capacitance

This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 μm GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51–59% PAE (Power Added Efficiency) and 19.8–21.2 dB power gain with a saturated power of 40.8–42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 × 2.4 mm2.

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