Nonuniform layer model of an image-guide millimeter-wave phase shifter

2004 ◽  
Vol 41 (6) ◽  
pp. 486-490 ◽  
Author(s):  
T. Fickenscher ◽  
A. Schwolen
Keyword(s):  
Millimeter Wave ◽  
Phase Shifter ◽  
Layer Model ◽  
Image Guide ◽  
Wave Phase ◽  
Nonuniform Layer

Millimeter-wave phase shifter based on waveguide-mounted RF-MEMS

2013 ◽  
Vol 55 (3) ◽  
pp. 465-468 ◽  
Author(s):  
Dimitra Psychogiou ◽  
Yunjia Li ◽  
Jan Hesselbarth ◽  
Stephane Kühne ◽  
Dimitrios Peroulis ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Phase Shifter ◽  
Rf Mems ◽  
Wave Phase

scholarly journals Tunable millimeter-wave phase shifter based on dielectric elastomer actuation

2014 ◽  
Vol 104 (2) ◽  
pp. 024104 ◽  
Author(s):  
P. Romano ◽  
O. Araromi ◽  
S. Rosset ◽  
H. Shea ◽  
J. Perruisseau-Carrier
Keyword(s):  
Millimeter Wave ◽  
Phase Shifter ◽  
Dielectric Elastomer ◽  
Wave Phase ◽  
Elastomer Actuation

An optically controllable millimeter-wave phase shifter

2017 ◽  
Author(s):  
Mohammad Soltani ◽  
Shaghayegh Yaraghi ◽  
Karim Mohammadpour-Aghdam ◽  
Mahmoud Shahabadi
Keyword(s):  
Millimeter Wave ◽  
Phase Shifter ◽  
Wave Phase

scholarly journals Analog-type millimeter-wave phase shifters based on MEMS tunable high-impedance surface and dielectric rod waveguide

2011 ◽  
Vol 3 (5) ◽  
pp. 533-538 ◽  
Author(s):  
Dmitry Chicherin ◽  
Mikael Sterner ◽  
Dmitri Lioubtchenko ◽  
Joachim Oberhammer ◽  
Antti V. Räisänen
Keyword(s):  
Millimeter Wave ◽  
Phase Shifter ◽  
Phase Shifters ◽  
Impédance Surface ◽  
Impedance Surface ◽  
Wave Phase ◽  
High Impedance ◽  
Type Phase ◽  
W Band ◽  
High Impedance Surface

Millimeter-wave phase shifters are important components for a wide scope of applications. An analog-type phase shifter for W-band has been designed, analyzed, fabricated, and measured. The phase shifter consists of a reconfigurable high-impedance surface (HIS) controlled by micro-electromechanical system (MEMS) varactors and placed adjacent to a silicon dielectric rod waveguide. The analog-type phase shift in the range of 0–32° is observed at 75 GHz whereas applying bias voltage from 0 to 40 V to the MEMS varactors. The insertion loss of the MEMS tunable HIS is between 1.7 and 5 dB, depending on the frequency.

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