Parasitic resistance and polarization-dependent polynomial-based non-linear analytical charge-control model for AlGaN/GaN MODFET for microwave frequency applications

Manju Korwal; S. Haldar; Mridula Gupta; R. S. Gupta

doi:10.1002/mop.11064

Parasitic resistance and polarization-dependent polynomial-based non-linear analytical charge-control model for AlGaN/GaN MODFET for microwave frequency applications

Microwave and Optical Technology Letters ◽

10.1002/mop.11064 ◽

2003 ◽

Vol 38 (5) ◽

pp. 371-378 ◽

Cited By ~ 11

Author(s):

Manju Korwal ◽

S. Haldar ◽

Mridula Gupta ◽

R. S. Gupta

Keyword(s):

Microwave Frequency ◽

Control Model ◽

Charge Control ◽

Parasitic Resistance ◽

Non Linear

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A compact analytical I–V model of AlGaAs/InGaAs/GaAs p-HEMTs based on non-linear charge control model

Microelectronic Engineering ◽

10.1016/j.mee.2004.03.085 ◽

2004 ◽

Vol 75 (2) ◽

pp. 127-136 ◽

Cited By ~ 2

Author(s):

K Remashan ◽

K Radhakrishnan

Keyword(s):

Control Model ◽

Linear Charge ◽

Charge Control ◽

Non Linear

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An analytical parasitic resistance dependent Id–Vd model for planar doped InAlAs/InGaAs/InP HEMT using non-linear charge control analysis

Microelectronic Engineering ◽

10.1016/s0167-9317(01)00689-x ◽

2002 ◽

Vol 60 (3-4) ◽

pp. 323-337 ◽

Cited By ~ 11

Author(s):

Ritesh Gupta ◽

Abhinav Kranti ◽

S. Haldar ◽

Mridula Gupta ◽

R.S. Gupta

Keyword(s):

Control Analysis ◽

Linear Charge ◽

Charge Control ◽

Parasitic Resistance ◽

Non Linear ◽

Inp Hemt

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A non-linear charge control model for symmetrical pin diodes

Mathematical and Computer Modelling ◽

10.1016/0895-7177(88)90671-1 ◽

1988 ◽

Vol 11 ◽

pp. 1128-1132

Author(s):

J. McGhee ◽

I.A. Henderson ◽

I. Hulley

Keyword(s):

Control Model ◽

Linear Charge ◽

Pin Diodes ◽

Charge Control ◽

Non Linear

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Analytical non-linear charge control model for InAlAs/InGaAs/InAlAs double heterostructure high electron mobility transistor (DH-HEMT)

Solid-State Electronics ◽

10.1016/j.sse.2004.08.002 ◽

2005 ◽

Vol 49 (2) ◽

pp. 167-174 ◽

Cited By ~ 6

Author(s):

Ritesh Gupta ◽

Sandeep Kumar Aggarwal ◽

Mridula Gupta ◽

R.S. Gupta

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Control Model ◽

High Electron ◽

Linear Charge ◽

High Electron Mobility ◽

Double Heterostructure ◽

Charge Control ◽

Non Linear

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A modified charge-control model for HEMTs

Thirteenth National Radio Science Conference. NRSC '96 ◽

10.1109/nrsc.1996.551144 ◽

2002 ◽

Author(s):

M.A. Aziz ◽

M. El-Banna

Keyword(s):

Control Model ◽

Charge Control

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Microwave-frequency non-linear universal model for PIN diode

2007 International Workshop on Physics of Semiconductor Devices ◽

10.1109/iwpsd.2007.4472467 ◽

2007 ◽

Cited By ~ 4

Author(s):

Kranti K. Tantwai

Keyword(s):

Microwave Frequency ◽

Pin Diode ◽

Universal Model ◽

Non Linear

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Photonic approach for microwave frequency measurement with adjustable measurement range and resolution using birefringence effect in highly non-linear fiber

Optics Express ◽

10.1364/oe.23.017613 ◽

2015 ◽

Vol 23 (13) ◽

pp. 17613 ◽

Cited By ~ 11

Author(s):

Danqi Feng ◽

Heng Xie ◽

Lifen Qian ◽

Qinhong Bai ◽

Junqiang Sun

Keyword(s):

Microwave Frequency ◽

Frequency Measurement ◽

Measurement Range ◽

Non Linear ◽

Birefringence Effect

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Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model

Solid-State Electronics ◽

10.1016/0038-1101(85)90030-9 ◽

1985 ◽

Vol 28 (10) ◽

pp. 997-1005 ◽

Cited By ~ 29

Author(s):

Mukunda B. Das ◽

Michael L. Roszak

Keyword(s):

Control Model ◽

Gate Length ◽

Charge Control ◽

Saturation Velocity ◽

Design Calculations

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A new charge-control model for single- and double-heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.137308 ◽

1992 ◽

Vol 39 (6) ◽

pp. 1303-1311 ◽

Cited By ~ 40

Author(s):

C.D. Parikh ◽

F.A. Lindholm

Keyword(s):

Heterojunction Bipolar Transistors ◽

Control Model ◽

Bipolar Transistors ◽

Charge Control ◽

Double Heterojunction

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Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrates

Solid-State Electronics ◽

10.1016/0038-1101(92)90106-m ◽

1992 ◽

Vol 35 (4) ◽

pp. 459-465 ◽

Cited By ~ 9

Author(s):

G. Halkias ◽

A. Vegiri ◽

G. Pananakakis ◽

A. Christou

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Control Model ◽

High Electron ◽

High Electron Mobility ◽

Charge Control ◽

Electron Mobility Transistors ◽

Efficient Charge ◽

Inp Substrates

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