Carrier-concentration-dependent low-field-mobility model for InAlAs/InGaAs/InP lattice-matched HEMT for microwave application

2001 ◽  
Vol 29 (1) ◽  
pp. 66-70 ◽  
Author(s):  
Jyotika Jogi ◽  
Sujata Sen ◽  
Mridula Gupta ◽  
R. S. Gupta
Keyword(s):  
Carrier Concentration ◽  
Mobility Model ◽  
Microwave Application ◽  
Low Field ◽  
Field Mobility ◽  
Lattice Matched ◽  
Low Field Mobility

LOW-FIELD MOBILITY MODEL ON PARABOLIC BAND ENERGY OF GRAPHENE NANORIBBON

2011 ◽  
Vol 25 (04) ◽  
pp. 281-290 ◽  
Author(s):  
N. AZIZIAH AMIN ◽  
ZAHARAH JOHARI ◽  
MOHAMMAD TAGHI AHMADI ◽  
RAZALI ISMAIL
Keyword(s):  
Carrier Mobility ◽  
Carrier Transport ◽  
Mobility Model ◽  
Graphene Nanoribbon ◽  
Band Energy ◽  
Low Field ◽  
Field Mobility ◽  
Increasing Temperature ◽  
Degenerate Regime ◽  
Low Field Mobility

The carrier mobility in low-field specifically in parabolic energy region of one-dimensional graphene nanoribbon (GNR) band energy is presented in this work. Low-field mobility model describe the carrier transport and its dependency factors when dealing with degenerate and non-degenerate principals. The result shows that the low-field mobility strongly depends on the temperature in the non-degenerate regime in which it sharply decreases with increasing temperature in the range of 10–250 K but the mobility is less affected by the temperature above 250 K. The effect of varying the GNR width to the mobility is also demonstrated in this work. In addition, it is also shown that the mobility depends on the carrier concentration in degenerate domain in which it increases at higher carrier concentrations.

scholarly journals A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations

2010 ◽  
Vol 57 (12) ◽  
pp. 3287-3294 ◽  
Author(s):  
Luca Silvestri ◽  
Susanna Reggiani ◽  
Elena Gnani ◽  
Antonio Gnudi ◽  
Giorgio Baccarani
Keyword(s):  
Mobility Model ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility
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