An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting

2020 ◽  
Vol 30 (12) ◽  
Author(s):  
Arijit Majumdar ◽  
Soumyo Chatterjee ◽  
Sayan Chatterjee ◽  
Sheli Sinha Chaudhari ◽  
Dipak Ranjan Poddar
Keyword(s):  
Ambient Temperature ◽  
Curve Fitting ◽  
Small Signal ◽  
Temperature Dependent ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model

Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices

2013 ◽  
Vol 54 ◽  
pp. 188-203 ◽  
Author(s):  
D. Godwinraj ◽  
Hemant Pardeshi ◽  
Sudhansu Kumar Pati ◽  
N. Mohankumar ◽  
Chandan Kumar Sarkar
Keyword(s):  
Charge Density ◽  
Drain Current ◽  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Nano Scale ◽  
Small Signal Model

Reliable Parameter Extraction Method Applied to an enhanced GaN HEMT small-signal model

2021 ◽  
pp. 108228
Author(s):  
Shaowei Wang ◽  
Jincan Zhang ◽  
Na Li ◽  
Min Liu ◽  
Bo Liu ◽  
...  
Keyword(s):  
Extraction Method ◽  
Parameter Extraction ◽  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model ◽  
Reliable Parameter

scholarly journals A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

2021 ◽  
Vol 11 (19) ◽  
pp. 9120
Author(s):  
Jihoon Kim
Keyword(s):  
Equivalent Circuit ◽  
Millimeter Wave ◽  
Power Amplifier ◽  
High Electron ◽  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model ◽  
Gan Hemts ◽  
Amplifier Design

A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. In general, GaN HEMTs adopt a source via structure to reduce device degradation due to self-heating. In this paper, the modified drain-source capacitance (Cds) circuit considering the source via structure is proposed. GaN HEMTs fabricated using a commercial 0.15 μm GaN HEMT process are measured with a 67 GHz vector network analyzer (VNA). The fabricated device is an individual source via (ISV) type. As a result, it is difficult to predict the measured S12 in the conventional small-signal model equivalent circuit. This causes errors in maximum stable gain/maximum available gain (MSG/MAG) and stability factor (K), which are important for circuit design. This paper proposes a small-signal equivalent circuit that adds the drain-source inductance to the drain-source capacitance considering the source via structure. The proposed equivalent circuit better reproduces the measured S12 without compromising the accuracy of other S-parameters up to 67 GHz and improves the accuracy of MSG/MAG and K. It is expected that the proposed model can be utilized in a large-signal model for 5G millimeter-wave GaN HEMT power amplifier design in the future.

Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

2009 ◽  
Vol 30 (12) ◽  
pp. 124003 ◽  
Author(s):  
Pu Yan ◽  
Pang Lei ◽  
Wang Liang ◽  
Chen Xiaojuan ◽  
Li Chengzhan ◽  
...  
Keyword(s):  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model

Small-signal model parameter extraction for AlGaN/GaN HEMT

2016 ◽  
Vol 37 (3) ◽  
pp. 034003 ◽  
Author(s):  
Le Yu ◽  
Yingkui Zheng ◽  
Sheng Zhang ◽  
Lei Pang ◽  
Ke Wei ◽  
...  
Keyword(s):  
Parameter Extraction ◽  
Small Signal ◽  
Signal Model ◽  
Model Parameter ◽  
Gan Hemt ◽  
Small Signal Model

Optimization of intrinsic elements from small signal model of GaN HEMT by using PSO

2015 ◽  
Author(s):  
Arijit Majumdar ◽  
Soumyo Chatterjee ◽  
Sayan Chatterjee ◽  
Sheli Sinha Chaudhari ◽  
Dipak Ranjan Poddar
Keyword(s):  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model

Optimization of Small-Signal Model of GaN HEMT by Using Evolutionary Algorithms

2017 ◽  
Vol 27 (4) ◽  
pp. 362-364 ◽  
Author(s):  
Arijit Majumder ◽  
Soumyo Chatterjee ◽  
Sayan Chatterjee ◽  
Sheli Sinha Chaudhari ◽  
Dipak Ranjan Poddar
Keyword(s):  
Evolutionary Algorithms ◽  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model
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