Multibias and temperature dependence of the current‐gain peak in GaN HEMT

2020 ◽  
Vol 30 (4) ◽  
Author(s):  
Mohammad A. Alim ◽  
Muhammad A. Hasan ◽  
Ali A. Rezazadeh ◽  
Christophe Gaquiere ◽  
Giovanni Crupi
Keyword(s):  
Temperature Dependence ◽  
Current Gain ◽  
Gan Hemt ◽  
Gain Peak

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

2006 ◽  
Vol 53 (5) ◽  
pp. 1245-1249 ◽  
Author(s):  
P.A. Ivanov ◽  
M.E. Levinshtein ◽  
A.K. Agarwal ◽  
S. Krishnaswami ◽  
J.W. Palmour
Keyword(s):  
Temperature Dependence ◽  
Current Gain

scholarly journals A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 353 ◽  
Author(s):  
Giovanni Crupi ◽  
Antonio Raffo ◽  
Valeria Vadalà ◽  
Giorgio Vannini ◽  
Alina Caddemi
Keyword(s):  
Short Circuit ◽  
Equivalent Circuit Model ◽  
Short Circuit Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
Device Performance ◽  
High Electron ◽  
Gan Hemt ◽  
Temperature Conditions ◽  
Conventional Instrumentation

The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology.

Temperature Dependence on Current Gain, On-to-Off Current Ratio, and Organic Magnetocurrent of Nonmagnetic Organic Transistors

2011 ◽  
Vol 58 (10) ◽  
pp. 3583-3586 ◽  
Author(s):  
Abd. Rashid Bin Mohd Yusoff ◽  
Dietmar Schulz ◽  
Eikner Holz ◽  
Ying Song ◽  
Saiful Anuar Shuib
Keyword(s):  
Temperature Dependence ◽  
Current Gain ◽  
Organic Transistors ◽  
Current Ratio

Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

2012 ◽  
Vol 217-219 ◽  
pp. 2393-2396 ◽  
Author(s):  
Han Guo ◽  
Wu Tang ◽  
Wei Zhou ◽  
Chi Ming Li
Keyword(s):  
Electrical Properties ◽  
Doping Concentration ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Saturation Current ◽  
Gan Hemt ◽  
Cap Layer ◽  
Dimensional Electron Gas

The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.

Sign in / Sign up

Export Citation Format

Share Document