Design of multioctave high‐efficiency power amplifier based on extended continuous Class‐B/J modes

2019 ◽  
Vol 29 (10) ◽  
Author(s):  
Xuefei Xuan ◽  
Fei Yang ◽  
Chenxi Liu
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Class B

scholarly journals X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1312 ◽  
Author(s):  
Chen Jin ◽  
Yuan Gao ◽  
Wei Chen ◽  
Jianhua Huang ◽  
Zhiyu Wang ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Integrated Circuit ◽  
High Efficiency ◽  
Second Harmonic ◽  
Power Added Efficiency ◽  
Optimum Load ◽  
Measurement Results ◽  
Class B ◽  
Point To Point ◽  
Output Capacitance

This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 μm GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51–59% PAE (Power Added Efficiency) and 19.8–21.2 dB power gain with a saturated power of 40.8–42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 × 2.4 mm2.

A High-Efficiency CMOS Class-B Push-Pull Power Amplifier for Code-Division-Multiple-Access Cellular System

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2463-2467 ◽  
Author(s):  
Michio Yokoyama ◽  
Tetsuya Saito ◽  
Ryoichi Tachibana ◽  
Akihiro Morimoto ◽  
Kazuya Masu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Code Division Multiple Access ◽  
Multiple Access ◽  
High Efficiency ◽  
Cellular System ◽  
Class B ◽  
Code Division Multiple

High efficiency class B GaN power amplifier with dynamic gate biasing for improved linearity

2012 ◽  
Vol 48 (18) ◽  
pp. 1136-1137 ◽  
Author(s):  
P. Medrel ◽  
J.F. Villemazet ◽  
A. Ramadan ◽  
L. Lapierre ◽  
J.M. Nebus ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Class B

A High-Efficiency CMOS Class-B Push-Pull Power Amplifier for CDMA Cellular System

1999 ◽  
Author(s):  
M. Yokoyama ◽  
T. Saito ◽  
R. Tachibana ◽  
A. Morimoto ◽  
K. Masu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Cellular System ◽  
Class B

scholarly journals Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands

2021 ◽  
Vol 2 (7) ◽  
pp. 39-50
Author(s):  
James F. Buckwalter ◽  
Mark J. W. Rodwell ◽  
Kang Ning ◽  
Ahmed Ahmed ◽  
Andrea Arias-Purdue ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Power Amplifier ◽  
High Efficiency ◽  
Fundamental Limits ◽  
Class A ◽  
Energy Efficient Communication ◽  
Efficient Communication ◽  
Class B ◽  
Matching Element ◽  
Circuit Techniques

This paper reviews the requirements for future digital arrays in terms of power amplifier requirements for output power and efficiency and the device technologies that will realize future energy-efficient communication and sensing electronics for the upper millimeter-wave bands (100-300 GHz). Fundamental device technologies are reviewed to compare the needs for compound semiconductors and silicon processes. Power amplifier circuit design above 100 GHz is reviewed based on load line and matching element losses. We present recently presented class-A and class-B PAs based on a InP HBT process that have demonstrated record efficiency and power around 140 GHz while discussing circuit techniques that can be applied in a variety of integrated circuits.

scholarly journals Design and Simulation for a High-efficiency Class-B Power Amplifier

2017 ◽  
Vol 139 ◽  
pp. 00056
Author(s):  
Wei Jiang ◽  
Qian Lin ◽  
Haifeng Wu
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Class B

scholarly journals A Broadband High-Efficiency Hybrid Continuous Inverse Power Amplifier Based on Extended Admittance Space

2021 ◽  
Vol 9 ◽  
Author(s):  
Chun Ni ◽  
Hui Wang ◽  
Jing Liu ◽  
Mingsheng Chen ◽  
Zhongxiang Zhang ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Second Harmonic ◽  
Inverse Power ◽  
Shift Parameter ◽  
Class B ◽  
Operating Bandwidth ◽  
Detailed Mathematical Analysis ◽  
Continuous Inverse ◽  
Good Agreement

A novel hybrid continuous inverse power amplifier (PA) that is constituted by a continuum of PA modes from the continuous inverse class-F to the continuous inverse class-B/J is proposed, and a detailed mathematical analysis is presented. The fundamental and second harmonic admittance spaces of the hybrid PA proposed in this article are analyzed mathematically. By introducing the phase shift parameter into the current waveform formula of the hybrid continuous inverse PA, the design space of the fundamental and second harmonic admittance is expanded, further increasing the operating bandwidth. The efficiency of the amplifier under different parameter conditions is calculated. In order to verify this method, a broadband high-efficiency PA is designed and fabricated. The drain voltage and current waveforms of the amplifier are extracted for analysis. The experimental measured results show a 60.7–71.5% drain efficiency across the frequency band of 0.5–2.5 GHz (133% bandwidth), and the designed PA can obtain an 11.8–13.9 dB gain in the interesting frequency range. The measured results are confirmed to be in good agreement with theory and simulations.

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