Microwave analysis of SiGe heterojunction double‐gate tunneling field‐effect transistor through its small‐signal equivalent circuit

Yung Hun Jung; In Man Kang; Seongjae Cho

doi:10.1002/mmce.21678

Microwave analysis of SiGe heterojunction double‐gate tunneling field‐effect transistor through its small‐signal equivalent circuit

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.21678 ◽

2019 ◽

Vol 29 (6) ◽

pp. e21678

Author(s):

Yung Hun Jung ◽

In Man Kang ◽

Seongjae Cho

Keyword(s):

Equivalent Circuit ◽

Field Effect ◽

Field Effect Transistor ◽

Small Signal ◽

Double Gate ◽

Effect Transistor ◽

Gate Tunneling

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Study on the novel double-gate tunneling field-effect transistor with InAs source

Proceedings of the 2015 4th International Conference on Computer, Mechatronics, Control and Electronic Engineering ◽

10.2991/iccmcee-15.2015.280 ◽

2015 ◽

Author(s):

YueHua Dai ◽

Ning Li ◽

Zhen Chen ◽

Bo Jin

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

The Novel ◽

Effect Transistor ◽

Gate Tunneling

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An empirical model for static I–V characteristics of double gate tunneling field effect transistor

2013 IEEE 10th International Conference on ASIC ◽

10.1109/asicon.2013.6811948 ◽

2013 ◽

Cited By ~ 1

Author(s):

D. M. Huang ◽

C. J. Yao ◽

D. H. Shi ◽

M. F. Li

Keyword(s):

Empirical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Gate Tunneling

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Rigorous Study of Double Gate Tunneling Field Effect Transistor Structure Based on Silicon

Materials Focus ◽

10.1166/mat.2018.1600 ◽

2018 ◽

Vol 7 (6) ◽

pp. 866-872 ◽

Cited By ~ 7

Author(s):

N. Guenifi ◽

S. B. Rahi ◽

T. Ghodbane

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Transistor Structure ◽

Rigorous Study ◽

Effect Transistor ◽

Gate Tunneling

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Numerical simulation on novel nano-scale lateral double-gate tunneling field effect transistor

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424618 ◽

2010 ◽

Author(s):

Frank He ◽

Haijun Lou ◽

Wang Zhou ◽

Lin Chen ◽

Yiwen Xu ◽

...

Keyword(s):

Numerical Simulation ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Nano Scale ◽

Effect Transistor ◽

Gate Tunneling

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Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit

2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama) ◽

10.23919/piers.2018.8598056 ◽

2018 ◽

Author(s):

Yung Hun Jung ◽

In Man Kang ◽

Seongjae Cho

Keyword(s):

Equivalent Circuit ◽

Field Effect ◽

Field Effect Transistor ◽

Small Signal ◽

Effect Transistor ◽

Microwave Regime

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Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Applied Physics Letters ◽

10.1063/1.2748366 ◽

2007 ◽

Vol 90 (26) ◽

pp. 263507 ◽

Cited By ~ 95

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Film Thickness ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Film ◽

Device Physics ◽

Double Gate ◽

Thickness Optimization ◽

Effect Transistor ◽

Gate Tunneling

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Direct extraction method for stripline packaged field effect transistor small signal equivalent circuit model

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.20762 ◽

2013 ◽

Vol 24 (3) ◽

pp. 306-313 ◽

Cited By ~ 1

Author(s):

Qiuyan Yin ◽

Jianjun Gao

Keyword(s):

Equivalent Circuit ◽

Extraction Method ◽

Field Effect ◽

Field Effect Transistor ◽

Equivalent Circuit Model ◽

Circuit Model ◽

Small Signal ◽

Direct Extraction ◽

Effect Transistor

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Small-signal, high-frequency equivalent circuit for the metal—oxide—semiconductor field-effect transistor

Proceedings of the Institution of Electrical Engineers ◽

10.1049/piee.1969.0140 ◽

1969 ◽

Vol 116 (5) ◽

pp. 699 ◽

Cited By ~ 12

Author(s):

J.W. Haslett ◽

F.N. Trofimenkoff

Keyword(s):

Metal Oxide ◽

Equivalent Circuit ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Small Signal ◽

Effect Transistor

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Analytical Model for Double-Gate Tunneling Field-Effect Transistor (DG-TFET) Using Carrier Concentration Approach

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2013.2829 ◽

2013 ◽

Vol 10 (5) ◽

pp. 1202-1208 ◽

Cited By ~ 2

Author(s):

Rakhi Narang ◽

Manoj Saxena ◽

R. S. Gupta ◽

Mridula Gupta

Keyword(s):

Carrier Concentration ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Gate Tunneling

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Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System

Electrical and Electronic Devices, Circuits, and Materials ◽

10.1002/9781119755104.ch2 ◽

2021 ◽

pp. 19-36

Author(s):

Guenifi Naima ◽

Shiromani Balmukund Rahi

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Power Circuit ◽

Ultra Low Power ◽

Design And Optimization ◽

Effect Transistor ◽

Circuit And System ◽

Gate Tunneling

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