A systematic design of 1.5-9 GHz high power-high efficiency two-stage GaAs PHEMT power amplifier

2014 ◽  
Vol 24 (5) ◽  
pp. 615-622 ◽  
Author(s):  
Mustafa Sayginer ◽  
Metin Yazgi
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Systematic Design ◽  
Two Stage

X-Band High-Efficiency High-Power GaN Power Amplifier Based on Edge-Triggered Gate Modulation

2020 ◽  
Vol 30 (9) ◽  
pp. 884-887
Author(s):  
Wen-Rao Fang ◽  
Wen-Hua Huang ◽  
Wen-Hui Huang ◽  
Jia-Wei Li ◽  
Chao Fu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
X Band

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Circuit World ◽  
2020 ◽  
Vol 46 (4) ◽  
pp. 243-248
Author(s):  
Min Liu ◽  
Panpan Xu ◽  
Jincan Zhang ◽  
Bo Liu ◽  
Liwen Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Common Source ◽  
Power Performance ◽  
Matching Network ◽  
Content Type ◽  
Power Added Efficiency ◽  
Saturated Output Power

Purpose Power amplifiers (PAs) play an important role in wireless communications because they dominate system performance. High-linearity broadband PAs are of great value for potential use in multi-band system implementation. The purpose of this paper is to present a cascode power amplifier architecture to achieve high power and high efficiency requirements for 4.2∼5.4 GHz applications. Design/methodology/approach A common emitter (CE) configuration with a stacked common base configuration of heterojunction bipolar transistor (HBT) is used to achieve high power. T-type matching network is used as input matching network. To increase the bandwidth, the output matching networks are implemented using the two L-networks. Findings By using the proposed method, the stacked PA demonstrates a maximum saturated output power of 26.2 dBm, a compact chip size of 1.17 × 0.59 mm2 and a maximum power-added efficiency of 46.3 per cent. The PA shows a wideband small signal gain with less than 3 dB variation over working frequency. The saturated output power of the proposed PA is higher than 25 dBm between 4.2 and 5.4 GHz. Originality/value The technology adopted for the design of the 4.2-to-5.4 GHz stacked PA is the 2-µm gallium arsenide HBT process. Based on the proposed method, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier because of high output stacking impedance.

42% high-efficiency two-stage HBT power-amplifier MMIC for W-CDMA cellular phone systems

2000 ◽  
Vol 48 (12) ◽  
pp. 2567-2572 ◽  
Author(s):  
T. Iwai ◽  
K. Kebayashi ◽  
Y. Nakasha ◽  
T. Miyashita ◽  
S. Ohara ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Cellular Phone ◽  
Two Stage

Gate Bias Adaptation of Doherty Power Amplifier for High Efficiency and High Power

2015 ◽  
Vol 25 (2) ◽  
pp. 136-138 ◽  
Author(s):  
Yunsik Park ◽  
Juyeon Lee ◽  
Seunghoon Jee ◽  
Seokhyeon Kim ◽  
Bumman Kim
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Gate Bias ◽  
Doherty Power Amplifier
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