A low-noise amplifier design using the performance limitations of a microwave transistor for the ultra-wideband applications

2010 ◽  
Vol 20 (5) ◽  
pp. 535-545 ◽  
Author(s):  
Filiz Güneş ◽  
Salih Demirel ◽  
Ufuk Özkaya
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Microwave Transistor ◽  
Performance Limitations ◽  
Amplifier Design ◽  
Noise Amplifier

scholarly journals CMOS Ultra-Wideband Low Noise Amplifier Design

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
K. Yousef ◽  
H. Jia ◽  
R. Pokharel ◽  
A. Allam ◽  
M. Ragab ◽  
...  
Keyword(s):  
Impedance Matching ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Output Impedance ◽  
Integrated Inductor ◽  
Technology Process ◽  
Amplifier Design ◽  
Noise Amplifier

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.

An Ultra-wideband Low Noise Amplifier Design in 0.13-um CMOS Technology

2021 ◽  
Author(s):  
Dongwei Pang ◽  
Yongfeng Gui ◽  
Shiwei Wu ◽  
Xiaohu Wang ◽  
Wang Gang
Keyword(s):  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Amplifier Design ◽  
Noise Amplifier
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