Low-frequency noise conversion modeling in RF devices under forced nonlinear operation

Author(s):  
Gabriele Conte ◽  
Francesco Bertazzi ◽  
Simona Donati Guerrieri ◽  
Fabrizio Bonani ◽  
Giovanni Ghione
2001 ◽  
Vol 01 (03) ◽  
pp. L189-L195 ◽  
Author(s):  
F. DANNEVILLE ◽  
B. TAMEN ◽  
A. CAPPY ◽  
J-B JURAVER ◽  
O. LLOPIS ◽  
...  

The conversion mechanisms of microscopic low frequency noise sources (e.g. generation-recombination noise sources) located in the channel of a FET (Field Effect Transistor), in the presence of a large RF signal, are investigated. It is shown that the base-band (low frequency) input gate noise voltage spectral density is strongly dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources distributed along the channel are also responsible of up-converted input gate noise voltage spectral density around the RF frequency.


Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  

1999 ◽  
Author(s):  
Charles K. Birdsall ◽  
J. P. Varboncoeur ◽  
P. J. Christensen

2021 ◽  
Vol 182 ◽  
pp. 108203
Author(s):  
Lígia T. Silva ◽  
Alda Magalhães ◽  
José Ferreira Silva ◽  
Fernando Fonseca

Measurement ◽  
2021 ◽  
pp. 109867
Author(s):  
Krzysztof ACHTENBERG ◽  
Janusz MIKOŁAJCZYK ◽  
Carmine CIOFI ◽  
Graziella SCANDURRA ◽  
Krystian MICHALCZEWSKI ◽  
...  

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  

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