scholarly journals The tractability index of memristive circuits: branch-oriented and tree-based models

2012 ◽  
Vol 35 (14) ◽  
pp. 1659-1669 ◽  
Author(s):  
Fernando García-Redondo ◽  
Ricardo Riaza
Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 181
Author(s):  
Ivo Marković ◽  
Milka Potrebić ◽  
Dejan Tošić

Digital potentiometers are substantial components for the design of many mixed-signal electronic circuits and systems. Their capability to program resistance value almost instantly provides hardware designers an additional level of freedom. Unfortunately, this feature is limited to DC and lower frequencies, due to parasitic effects. Nowadays, memristors as continuously tunable resistors are becoming candidates for potentiometer successors. Memristors are two-terminal non-volatile devices which have less significant parasitic effects and a wide resistance range. The memristance value can be changed on the fly. Using nanotechnology, memristor implementation has a nanoscale footprint with nanosecond transition between resistive states. In this paper, we present a comparison between the frequency characteristics of digital potentiometers and the only commercially available memristors. Memristor parasitic effects dominate at higher frequencies which extends the bandwidth. In order to present the advantages of memristive circuits, we have analyzed and implemented tunable circuits such as a voltage divider, an inverting amplifier, a high-pass filter, and a phase shifter. A commercially available memristor by KnowM Inc. is used for this purpose. Experimental results obtained by the measurements verify that a memristor has equal or better characteristics than a digital potentiometer. Memristive realizations of voltage dividers and inverting amplifiers have a wider bandwidth, while filters and phase shifters with a memristor have almost identical frequency characteristics as the corresponding realizations with a digital potentiometer.


Technologies ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 118 ◽  
Author(s):  
Francesco Caravelli ◽  
Juan Carbajal

We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter. We provide an brief historical introduction, as well as an overview over the physical mechanism that lead to memristive behavior. This review is meant to guide nonpractitioners in the field of memristive circuits and their connection to machine learning and neural computation.


Complexity ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-15 ◽  
Author(s):  
Dalibor Biolek ◽  
Zdeněk Biolek ◽  
Viera Biolková

The duality of nonlinear systems built from higher-order two-terminal Chua’s elements and independent voltage and current sources is analyzed. Two different approaches are now being generalized for circuits with higher-order elements: the classical duality principle, hitherto restricted to circuits built from R-C-L elements, and Chua’s duality of memristive circuits. The so-called storeyed structure of fundamental elements is used as an integrating platform of both approaches. It is shown that the combination of associated flip-type and shift-type transformations of the circuit elements can generate dual networks with interesting features. The regularities of the duality can be used for modeling, hardware emulation, or synthesis of systems built from elements that are not commonly available, such as memristors, via classical dual elements.


Author(s):  
Grigorios Tastzoglou ◽  
Vasileios Ntinas ◽  
Ioakeim G. Georgoudas ◽  
Angelos Amanatiadis ◽  
Georgios Ch. Sirakoulis

2016 ◽  
Vol 26 (13) ◽  
pp. 1650217 ◽  
Author(s):  
Fangfang Jiang ◽  
Zhicheng Ji ◽  
Qing-Guo Wang ◽  
Jitao Sun

In this paper, we consider a class of flux controlled memristive circuits with a piecewise linear memristor (i.e. the characteristic curve of the memristor is given by a piecewise linear function). The mathematical model is described by a discontinuous planar piecewise smooth differential system, which is defined on three zones separated by two parallel straight lines [Formula: see text] (called as discontinuity lines in discontinuous differential systems). We first investigate the stability of equilibrium points and the existence and uniqueness of a crossing limit cycle for the memristor-based circuit under self-excited oscillation. We then analyze the existence of periodic orbits of forced nonlinear oscillation for the memristive circuit with an external exciting source. Finally, we give numerical simulations to show good matches between our theoretical and simulation results.


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