Understanding the Impact of Film Disorder and Local Surface Potential in Ultraviolet Photoelectron Spectroscopy of PEDOT

2017 ◽  
Vol 39 (4) ◽  
pp. 1700533 ◽  
Author(s):  
William A. Muñoz ◽  
Xavier Crispin ◽  
Mats Fahlman ◽  
Igor V. Zozoulenko
2020 ◽  
Vol 152 (14) ◽  
pp. 144503
Author(s):  
Junichi Nishitani ◽  
Shutaro Karashima ◽  
Christopher W. West ◽  
Toshinori Suzuki

Author(s):  
Demetrio A da Silva Filho ◽  
Veaceslav Coropceanu ◽  
Denis Fichou ◽  
Nadine E Gruhn ◽  
Tonja G Bill ◽  
...  

Density functional theory calculations together with highly resolved gas-phase ultraviolet photoelectron spectroscopy have been applied to oligothiophene chains with up to eight thiophene rings. One of the important parameters governing the charge transport properties in the condensed phase is the amount of energy relaxation upon ionization. Here, we investigate the impact on this parameter of the backbone flexibility present in oligothiophenes as a result of inter-ring torsional motions. With respect to oligoacenes that are characterized by a coplanar and rigid backbone, the torsional flexibility in oligothiophenes adds to the relaxation energy and leads to the broadening of the first ionization peak, making its analysis more complex.


2019 ◽  
Vol 9 (4) ◽  
pp. 504-511
Author(s):  
Sikha Mishra ◽  
Urmila Bhanja ◽  
Guru Prasad Mishra

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.


1981 ◽  
Vol 44 (5) ◽  
pp. 1059-1066 ◽  
Author(s):  
J.M. Dyke ◽  
N.B.H. Jonathan ◽  
A. Morris ◽  
M.J. Winter

2021 ◽  
pp. 002199832199945
Author(s):  
Jong H Eun ◽  
Bo K Choi ◽  
Sun M Sung ◽  
Min S Kim ◽  
Joon S Lee

In this study, carbon/epoxy composites were manufactured by coating with a polyamide at different weight percentages (5 wt.%, 10 wt.%, 15 wt.%, and 20 wt.%) to improve their impact resistance and fracture toughness. The chemical reaction between the polyamide and epoxy resin were examined by fourier transform infrared spectroscopy, differential scanning calorimetry and X-ray photoelectron spectroscopy. The mechanical properties and fracture toughness of the carbon/epoxy composites were analyzed. The mechanical properties of the carbon/epoxy composites, such as transverse flexural tests, longitudinal flexural tests, and impact tests, were investigated. After the impact tests, an ultrasonic C-scan was performed to reveal the internal damage area. The interlaminar fracture toughness of the carbon/epoxy composites was measured using a mode I test. The critical energy release rates were increased by 77% compared to the virgin carbon/epoxy composites. The surface morphology of the fractured surface was observed. The toughening mechanism of the carbon/epoxy composites was suggested based on the confirmed experimental data.


2006 ◽  
Vol 455 (1) ◽  
pp. 193-203 ◽  
Author(s):  
M. P. de Jong ◽  
R. Friedlein ◽  
W. Osikowicz ◽  
W. R. Salaneck ◽  
M. Fahlman

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