Effects of Ultrasonic Treatment on Hydrophilicity and Thermal Stability of Silk

2019 ◽  
Vol 304 (12) ◽  
pp. 1900364
Author(s):  
Wuchao Wang ◽  
Luqman Jameel Rather ◽  
Kang Gong ◽  
Qi Zhou ◽  
Tonghua Zhang ◽  
...  
2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
N. Y. Yuhana ◽  
S. Ahmad ◽  
A. R. Shamsul Bahri

The effect of ultrasonic treatment on thermal stability of binary systems containing epoxy and organic chemically modified montmorillonite (Cloisite 30B) was studied. Differential scanning calorimetry (DSC), thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and wide angle X-ray diffraction (WAXD) analysis were utilized. The mixing of epoxy and Cloisite 30B nanocomposites was performed by mechanical stirring, followed by 1 or 3-hour ultrasonic treatment, and polyetheramine as the curing agent. Both XRD and TEM analyses confirmed that the intercalation of Cloisite 30B was achieved. Thed0spacings for silicate in cured sample prepared at 1- and 3-hour duration of ultrasonic treatment were about 21 and 18 Å, respectively. This shows that shorter duration or ultrasonic treatment may be preferable to achieve higherd0spacing of clay. This may be attributed to the increase in viscosity as homopolymerization process occurred, which restricts silicate dispersion. The 1-hour sonicated samples seem to be more thermally stable during the glass transition, but less stable during thermal decomposition process.


2010 ◽  
Vol 667-669 ◽  
pp. 605-609 ◽  
Author(s):  
Asiya Nazarova ◽  
Radik R. Mulyukov ◽  
Yuriy Tsarenko ◽  
Vasiliy Rubanik ◽  
Ayrat A. Nazarov

The effect of ultrasonic treatment on the microstructure, microhardness and thermal stability of pure nickel after high pressure torsion (HPT) was studied. It was shown that the ultrasonic treatment reduces internal stresses induced by severe plastic deformation. The higher the intensity of ultrasound in the range studied, the stronger is this effect. Also it was revealed that grain growth in nickel processed by HPT followed by ultrasonic treatment occurs at higher temperatures than that in nickel as-processed by HPT, i.e. the thermal stability of nanostructured nickel is increased.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  

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