In-situ-Synthetized Silver/Epoxy Nanocomposites: Electrical Characterization by Means of Dielectric Spectroscopy

2010 ◽  
Vol 211 (17) ◽  
pp. 1933-1939 ◽  
Author(s):  
Lorenzo Vescovo ◽  
Marco Sangermano ◽  
Riccardo Scarazzini ◽  
Galder Kortaberria ◽  
Inaki Mondragon
Keyword(s):  
Dielectric Spectroscopy ◽  
Electrical Characterization ◽  
Epoxy Nanocomposites ◽  
Silver Epoxy

Dynamics of in situ synthetized silver-epoxy nanocomposites as studied by dielectric relaxation spectroscopy

2010 ◽  
Vol 120 (4) ◽  
pp. 2361-2367 ◽  
Author(s):  
G. Kortaberria ◽  
P. Arruti ◽  
I. Mondragon ◽  
L. Vescovo ◽  
M. Sangermano
Keyword(s):  
Dielectric Relaxation ◽  
Dielectric Relaxation Spectroscopy ◽  
Epoxy Nanocomposites ◽  
Silver Epoxy

Mechanism of Particle Formation in Silver/Epoxy Nanocomposites Obtained through a Visible-Light-Assisted in Situ Synthesis

Langmuir ◽  
2017 ◽  
Vol 33 (39) ◽  
pp. 10248-10258 ◽  
Author(s):  
Ignacio E. dell’Erba ◽  
Francisco D. Martínez ◽  
Cristina E. Hoppe ◽  
Guillermo E. Eliçabe ◽  
Marcelo Ceolín ◽  
...  
Keyword(s):  
Visible Light ◽  
Particle Formation ◽  
In Situ Synthesis ◽  
Epoxy Nanocomposites ◽  
Silver Epoxy

Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

1998 ◽  
Author(s):  
H. Lorenz ◽  
C. Engel
Keyword(s):  
Focused Ion Beam ◽  
Cell Function ◽  
Dielectric Breakdown ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Floating Gate ◽  
Leakage Path ◽  
Contrast Technique ◽  
Voltage Contrast

Abstract Due to the continuously decreasing cell size of DRAMs and concomitantly diminishing thickness of some insulating layers new failure mechanisms appear which until now had no significance for the cell function. For example high resistance leakage paths between closely spaced conductors can lead to retention problems. These are hard to detect by electrical characterization in a memory tester because the involved currents are in the range of pA. To analyze these failures we exploit the very sensitive passive voltage contrast of the Focused Ion Beam Microscope (FIB). The voltage contrast can further be enhanced by in-situ FIB preparations to obtain detailed information about the failure mechanism. The first part of this paper describes a method to detect a leakage path between a borderless contact on n-diffusion and an adjacent floating gate by passive voltage contrast achieved after FIB circuit modification. In the second part we will demonstrate the localization of a DRAM trench dielectric breakdown. In this case the FIB passive voltage contrast technique is not limited to the localization of the failing trench. We can also obtain the depth of the leakage path by selective insitu etching with XeF2 stopped immediately after a voltage contrast change.

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

In situ preparation of functionalized graphene oxide/epoxy nanocomposites with effective reinforcements

2011 ◽  
Vol 21 (35) ◽  
pp. 13290 ◽  
Author(s):  
Chenlu Bao ◽  
Yuqiang Guo ◽  
Lei Song ◽  
Yongchun Kan ◽  
Xiaodong Qian ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Functionalized Graphene ◽  
Epoxy Nanocomposites ◽  
Functionalized Graphene Oxide ◽  
In Situ Preparation

In situ stabilized carbon nanofiber (CNF) reinforced epoxy nanocomposites

2010 ◽  
Vol 20 (23) ◽  
pp. 4937 ◽  
Author(s):  
Jiahua Zhu ◽  
Suying Wei ◽  
Jongeun Ryu ◽  
Mahesh Budhathoki ◽  
Gang Liang ◽  
...  
Keyword(s):  
Carbon Nanofiber ◽  
Epoxy Nanocomposites

Design and Fabrication of a Multi-Functional Nanomanipulator

2009 ◽  
Vol 419-420 ◽  
pp. 21-24
Author(s):  
Ming Chang ◽  
Chia Hung Lin ◽  
Chung Po Lin ◽  
Juti Rani Deka
Keyword(s):  
Degrees Of Freedom ◽  
Electrical Characterization ◽  
The Body ◽  
Rapid Expansion ◽  
Nano Materials ◽  
Nano Fabrication ◽  
Permissible Range ◽  
Manipulation System

With rapid expansion of nanotechnology, microminiaturization has become imperative in the field of micro/nano fabrication. A nanomanipulation system with high degrees of freedom that can perform nanomachining, nanofabrication and mechanical/electrical characterization of nanoscale objects inside a scanning electron microscope (SEM) is presented. The manipulation system consists of several individual operating units each having three linear stages and one rotational stage. The body of the manipulator is designed using the idea of superposition. Each operating unit can move in the permissible range of SEM’s vacuum chamber and can increase or decrease the number of units according to the requirement. Experiments were executed to investigate the in-situ electrical resistance of nano materials.

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