Tribological investigations of ionic liquids in ultra-high vacuum environment

2013 ◽  
Vol 26 (7-8) ◽  
pp. 514-524 ◽  
Author(s):  
Vladimir Totolin ◽  
Marcello Conte ◽  
Edurne Berriozábal ◽  
Francesco Pagano ◽  
Ichiro Minami ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Vacuum Environment

Ionic Liquids Studied at Ultra-High Vacuum

2012 ◽  
pp. 251-282
Author(s):  
Kevin R. J. Lovelock ◽  
Peter Licence
Keyword(s):  
Ionic Liquids ◽  
High Vacuum ◽  
Ultra High Vacuum

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Electron Irradiation Effects in Silicon Thin Foils Under Ultra-High Vacuum Environment

1997 ◽  
Vol 258-263 ◽  
pp. 553-558 ◽  
Author(s):  
S. Takeda ◽  
K. Koto ◽  
Masako Hirata ◽  
T. Kuno ◽  
S. Iijima ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Irradiation Effects ◽  
Thin Foils ◽  
High Vacuum Environment

Reflection Electron Microscopy (REM) of Surface Steps & Dislocations on GaP(110) & GaAs(110)

1982 ◽  
Vol 40 ◽  
pp. 450-451
Author(s):  
Tung Hsu ◽  
Sumio Iijima
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Heating Stage ◽  
Surface Steps ◽  
Reflection Electron Microscopy ◽  
Electron Microscopes ◽  
High Vacuum Environment

Reflection electron microscopy (REM) in ultra high vacuum environment with heating stage has been reported by Osakabe, et al. In this paper, we present our results in REM imaging of single steps and dislocations using commercial electron microscopes (JEM-100B and Philips-400T) under ordinary pressure (10-7 torr) and room temperature.

Epitaxial films of CoSi2 on Si (311) and Si (211)

1989 ◽  
Vol 47 ◽  
pp. 456-457
Author(s):  
J.L. Batstone ◽  
Julia M. Phillips
Keyword(s):  
Intermediate Phase ◽  
High Vacuum ◽  
Type A ◽  
Dislocation Motion ◽  
Ultra High Vacuum ◽  
Type B ◽  
Metal Thickness ◽  
Cobalt Silicides ◽  
High Vacuum Environment

Cobalt silicides can be grown epitaxially on silicon by room temperature (RT) deposition of Co onto in-situ cleaned Si in an ultra high vacuum environment. Post-deposition annealing at ∼550°C leads to the formation of CoSi2 which exists in two orientations on Si (111), known as type A and type B. The fractional coverage of type A CoSi2 is critically dependent on the metal thickness. If <10Å Co is deposited at RT, type B CoSi2 is formed. For >10Å Co, intermediate metal-rich silicide phases such as Co2Si and CoSi are formed at low (<450°C) temperatures. At >500°C, mixed A+B type CoSi2 is formed. If higher reaction temperatures are employed, large (∼2000Å) pinholes open up allowing dislocation motion and a conversion of the film to entirely type B CoSi2.Epitaxial growth of CoSi2 on Si (311) has recently been demonstrated. Two orientations, A and B were observed where the B orientation was rotated with respect to the substrate about the inclined (111) axis. Electrically continuous films were obtained at temperatures as low as 500°c with residual resistivities ∽10μΩcm. This work has now been extended to study the effects of substrate orientation on intermediate phase formation in the Co/Si system.

Studies of the tungsten-oxygen surface reaction by means of reflexion high energy electron diffraction

1971 ◽  
Vol 323 (1555) ◽  
pp. 523-539 ◽  
Keyword(s):  
Electron Diffraction ◽  
Gas Phase ◽  
High Vacuum ◽  
High Energy ◽  
Simple Relation ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
High Energy Electron ◽  
Oxide Interface ◽  
High Vacuum Environment

The reactions between both (100) and (110) surfaces of tungsten and oxygen have been studied in an ultra-high vacuum environment by means of reflexion mode high energy electron diffraction. Particular attention has been paid to changes in interfacial geometry owing to faceting which occurs on the (100) surface, and oxide nucleation which occurs on both faces. The faceting of the (100) face is shown to be more complicated than had previously been supposed, the faceted surface being composed of {211} planes which are themselves faceted into {110} planes. The activation energy for the degradation of facets in a vacuum has been measured as 6.5 ± 1.5 eV, greatly in excess of values reported for the formation of facets. It is suggested that faceting arises from the evaporation of oxide molecules. At temperatures below 1025 K tungsten trioxide nuclei form on both the (100) and (110) surfaces when exposed to oxygen. The exposures needed to form nuclei are much greater for the (110) surfaces than for the (100). Nuclei also form on (100) surfaces which have been previously faceted by heating in oxygen at temperatures above 1025 K. In this case the exposures needed to produce nuclei are characteristic of the (110) surface. The epitaxial relationships between the oxide and the metal have been determined. A simple relation has been found to hold. It is postulated that the metal plane at the oxide interface is not necessarily that which was originally exposed to the gas phase.

Evaluation of Vapor Pressure and Ultra-High Vacuum Tribological Properties of Ionic Liquids

2011 ◽  
Vol 54 (6) ◽  
pp. 911-919 ◽  
Author(s):  
Kenneth W. Street ◽  
Wilfredo Morales ◽  
Victor R. Koch ◽  
Daniel J. Valco ◽  
Ryan M. Richard ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Vapor Pressure ◽  
Tribological Properties ◽  
High Vacuum ◽  
Ultra High Vacuum
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