Gas‐phase OH oxidation kinetics of pyrazine, pyrimidine, and pyridazine

Author(s):  
Brahim Samir ◽  
Carmen Kalalian ◽  
Estelle Roth ◽  
Rachid Salghi ◽  
Abdelkhaleq Chakir
2021 ◽  
Vol 125 (10) ◽  
pp. 2069-2076
Author(s):  
Brendan C. Sweeny ◽  
David C. McDonald ◽  
Nicholas S. Shuman ◽  
Albert A. Viggiano ◽  
Juergen Troe ◽  
...  

2017 ◽  
Vol 41 (15) ◽  
pp. 7491-7505 ◽  
Author(s):  
S. Vijayakumar ◽  
C. B. Ramya ◽  
Avinash Kumar ◽  
B. Rajakumar

Cl atom initiated photo oxidation kinetics of cyclohexene and cycloheptene.


Chemosphere ◽  
2017 ◽  
Vol 172 ◽  
pp. 333-340 ◽  
Author(s):  
Shuang Luo ◽  
Zongsu Wei ◽  
Richard Spinney ◽  
Zhihui Yang ◽  
Liyuan Chai ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (47) ◽  
pp. 27361-27368
Author(s):  
Brahim Samir ◽  
Carmen Kalalian ◽  
Estelle Roth ◽  
Rachid Salghi ◽  
Abdelkhaleq Chakir

In this work, we report the gas phase UV absorption spectra and the kinetics of the OH-oxidation of 1H-1,2,3-triazole and pyrazole.


2020 ◽  
Author(s):  
Camilo A. Mesa ◽  
Ludmilla Steier ◽  
Benjamin Moss ◽  
Laia Francàs ◽  
James E. Thorne ◽  
...  

<p><i>Operando</i> spectroelectrochemical analysis is used to determine the water oxidation reaction kinetics for hematite photoanodes prepared using four different synthetic procedures. Whilst these photoanodes exhibit very different current / voltage performance, their underlying water oxidation kinetics are found to be almost invariant. Lower photoanode performance was found to correlate with the observation of optical signals indicative of charge accumulation in mid-gap oxygen vacancy states, indicating these states do not contribute directly to water oxidation.</p>


1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.


1998 ◽  
Vol 32 (19) ◽  
pp. 2990-2996 ◽  
Author(s):  
Lukas Emmenegger ◽  
D. Whitney King ◽  
Laura Sigg ◽  
Barbara Sulzberger

Sign in / Sign up

Export Citation Format

Share Document