A 13.5-in. Quad-FHD flexible CAAC-OS AMOLED display with long-life OLED device structure

2014 ◽  
Vol 22 (12) ◽  
pp. 603-612 ◽  
Author(s):  
Shogo Uesaka ◽  
Ryohei Yamaoka ◽  
Toshiki Sasaki ◽  
Akihiro Chida ◽  
Susumu Kawashima ◽  
...  
Keyword(s):  
Device Structure ◽  
Oled Device ◽  
Long Life

21.3: A 13.5-in. Quad-FHD Flexible CAAC-OS AMOLED Display with Long-Life OLED Device Structure

2014 ◽  
Vol 45 (1) ◽  
pp. 271-274 ◽  
Author(s):  
Shogo Uesaka ◽  
Ryohei Yamaoka ◽  
Toshiki Sasaki ◽  
Akihiro Chida ◽  
Susumu Kawashima ◽  
...  
Keyword(s):  
Device Structure ◽  
Oled Device ◽  
Long Life

19‐4: Ultra‐Long‐Life Deep‐Blue OLED Device Achieved by Controlling the Carrier Recombination Site

2021 ◽  
Vol 52 (1) ◽  
pp. 236-239
Author(s):  
Takuya Ishimoto ◽  
Naoaki Hashimoto ◽  
Shiho Nomura ◽  
Takumu Okuyama ◽  
Hiromi Nowatari ◽  
...  
Keyword(s):  
Recombination Site ◽  
Oled Device ◽  
Deep Blue ◽  
Carrier Recombination ◽  
Long Life

27.3: Stable White OLED Device Structure for 3D-Compatible Head Mounted Display

2012 ◽  
Vol 43 (1) ◽  
pp. 363-366 ◽  
Author(s):  
Emiko Kambe ◽  
Masato Nakamura ◽  
Jiro Yamada ◽  
Katsuhide Uchino ◽  
Yoshito Shiraishi
Keyword(s):  
Device Structure ◽  
Oled Device ◽  
Head Mounted Display ◽  
White Oled

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Measurement of lattice parameter at the nanometer scale using convergent-beam microdiffraction from a thermal emission source

1993 ◽  
Vol 51 ◽  
pp. 690-691
Author(s):  
W. T. Pike
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Thermal Emission ◽  
Lattice Parameter ◽  
Scanning Transmission Electron Microscope ◽  
Emission Source ◽  
Device Structure ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Convergent Beam

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.

Recollections of a Long Life

2009 ◽  
Author(s):  
John Cam Hobhouse
Keyword(s):  
Long Life

Dying for a long life

Nature ◽  
2011 ◽  
Author(s):  
Ewen Callaway
Keyword(s):  
Long Life

Capaian pembangunan manusia: analisis komparatif Provinsi Banten, Jawa Barat dan DKI Jakarta

2018 ◽  
Vol 13 (1) ◽  
Author(s):  
Adriwati Adriwati
Keyword(s):  
Human Development ◽  
Human Development Index ◽  
Human Population ◽  
Provincial Government ◽  
Healthy Life ◽  
Development Index ◽  
Long Life ◽  
The Difference ◽  
The Government ◽  
Development Paradigm

Human development is a development paradigm that puts human (population) as the focus and final target of all development activities, namely the achievement of control over resources (income to achieve decent living), improvement of health status (long life and healthy life) and improve education. To see the success rate of human development, UNDP publishes an indicator of Human Development Index (HDI). This study discusses the achievements of human development that have been pursued by the government. The problem analyzed in this research is the difference of human development achievement in some provincial government in Indonesia. This paper aims to compare the achievements of human development in some provincial governments seen from the achievement of human development index of each province. Research location in Banten Province, West Java and DKI Jakarta.Keywords:Human Development Index, Human Development Achievement

A Comparative Overview of the Fair Wear and Tear Exception: the Duty of Holders of Temporary Interests to Preserve Property

2002 ◽  
Vol 6 (1) ◽  
pp. 85-100
Author(s):  
Raffaele Caterina
Keyword(s):  
Common Core ◽  
Complete Solution ◽  
Roman Law ◽  
Private Ownership ◽  
Legal Systems ◽  
Personal Rights ◽  
Wear And Tear ◽  
Long Life ◽  
The Law ◽  
The Relationship

“A system of private ownership must provide for something more sophisticated than absolute ownership of the property by one person. A property owner needs to be able to do more than own it during his lifetime and pass it on to someone else on his death.”1 Those who own things with a long life quite naturally feel the urge to deal in segments of time. Most of the owner's ambitions in respect of time can be met by the law of contract. But contract does not offer a complete solution, since contracts create only personal rights. Certain of the owner's legitimate wishes can be achieved only if the law allows them to be given effect in rem—that is, as proprietary rights. Legal systems have responded differently to the need for proprietary rights limited in time. Roman law created usufruct and other iura in re aliena; English law created different legal estates. Every system has faced similar problems. One issue has been the extent to which the holder of a limited interest should be restricted in his or her use and enjoyment in order to protect the holders of other interests in the same thing. A common core of principles regulates the relationship between those who hold temporary interests and the reversioners. For instance, every system forbids holder of the possessory interest to damage the thing arbitrarily. But other rules are more controversial. This study focuses upon the rules which do not forbid, but compel, certain courses of action.

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