Scaling law for strain dependence of Raman spectra in transition‐metal dichalcogenides

2020 ◽  
Vol 51 (8) ◽  
pp. 1353-1361
Author(s):  
Ye Zhang ◽  
Huaihong Guo ◽  
Wei Sun ◽  
Hongzhi Sun ◽  
Sajjad Ali ◽  
...  
Keyword(s):  
Transition Metal ◽  
Raman Spectra ◽  
Scaling Law ◽  
Transition Metal Dichalcogenides ◽  
Strain Dependence ◽  
Metal Dichalcogenides

scholarly journals Strain dependence of band gaps and exciton energies in pure and mixed transition-metal dichalcogenides

2016 ◽  
Vol 94 (15) ◽  
Author(s):  
Rodrick Kuate Defo ◽  
Shiang Fang ◽  
Sharmila N. Shirodkar ◽  
Georgios A. Tritsaris ◽  
Athanasios Dimoulas ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Band Gaps ◽  
Strain Dependence ◽  
Metal Dichalcogenides ◽  
Mixed Transition

scholarly journals Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides

ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  
Keyword(s):  
Transition Metal ◽  
Optical Mapping ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

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