Raman diagnostics of free charge carriers in boron‐doped silicon nanowires

2019 ◽  
Vol 50 (11) ◽  
pp. 1642-1648 ◽  
Author(s):  
S.P. Rodichkina ◽  
T. Nychyporuk ◽  
A.V. Pavlikov ◽  
V. Lysenko ◽  
V.Yu. Timoshenko
Keyword(s):  
Silicon Nanowires ◽  
Charge Carriers ◽  
Free Charge ◽  
Boron Doped ◽  
Doped Silicon

Charge Transport Characteristics in Boron-Doped Silicon Nanowires

2008 ◽  
Vol 55 (11) ◽  
pp. 2931-2938 ◽  
Author(s):  
Sarang Ingole ◽  
Pradeep Manandhar ◽  
Satishkumar B. Chikkannanavar ◽  
Elshan A. Akhadov ◽  
S. Tom Picraux
Keyword(s):  
Charge Transport ◽  
Silicon Nanowires ◽  
Boron Doped ◽  
Doped Silicon

Scanning tunneling microscopic study of boron-doped silicon nanowires

2001 ◽  
Vol 79 (15) ◽  
pp. 2468-2470 ◽  
Author(s):  
D. D. D. Ma ◽  
C. S. Lee ◽  
S. T. Lee
Keyword(s):  
Microscopic Study ◽  
Silicon Nanowires ◽  
Scanning Tunneling ◽  
Boron Doped ◽  
Doped Silicon

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

2005 ◽  
Vol 23 ◽  
pp. 137-140
Author(s):  
X.B. Zeng ◽  
X.B. Liao ◽  
S.T. Dai ◽  
B. Wang ◽  
Y.Y. Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Doped Silicon ◽  
81.15 Gh

Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm-1,which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev,1.42ev,1.47ev. Possible reason for these is suggested. PACS: 36.40._c; 81.15.Gh; 81.20._n

scholarly journals Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Stefan Weidemann ◽  
Maximilian Kockert ◽  
Dirk Wallacher ◽  
Manfred Ramsteiner ◽  
Anna Mogilatenko ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Pore Formation ◽  
Gas Adsorption ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Phonon Confinement ◽  
Single Crystalline ◽  
Boron Doped ◽  
Doped Silicon

Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We analyzed the structure of solid, rough, and porous nanowire surfaces of boron-doped silicon substrates with resistivities ofρ> 1000 Ωcm,ρ= 14–23 Ωcm, andρ< 0.01 Ωcm by scanning electron microscopy and nitrogen gas adsorption. Silicon nanowires prepared from highly doped silicon reveal mesopores on their surface. However, we found a limit for pore formation. Pores were only formed by etching below a critical H2O2concentration (cH2O2<0.3 M). Furthermore, we determined the pore size distribution dependent on the etching parameters and characterized the morphology of the pores on the nanowire surface. The pores are in the regime of small mesopores with a mean diameter of 9–13 nm. Crystal and surface structure of individual mesoporous nanowires were investigated by transmission electron microscopy. The vibrational properties of nanowire ensembles were investigated by Raman spectroscopy. Heavily boron-doped silicon nanowires are highly porous and the remaining single crystalline silicon nanoscale mesh leads to a redshift and a strong asymmetric line broadening for Raman scattering by optical phonons at 520 cm−1. This redshift,λSi  bulk=520 cm−1  →λSi  nanowire=512 cm−1, hints to a phonon confinement in mesoporous single crystalline silicon nanowires.

Fabrication and Electrical Characterization of Silicon Nanowire Arrays

2004 ◽  
Vol 832 ◽  
Author(s):  
Sarah M. Dilts ◽  
Ahmad Mohmmad ◽  
Kok-Keong Lew ◽  
Joan M. Redwing ◽  
Suzanne E. Mohney
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Electrical Contact ◽  
Electrical Characterization ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Alumina Membranes ◽  
Boron Doped ◽  
Doped Silicon ◽  
Vls Growth

ABSTRACTHigh density boron-doped silicon nanowire arrays were fabricated within the pores of anodized alumina membranes via vapor-liquid-solid (VLS) growth Anodized alumina membranes with a nominal pore diameter of 200 nm served as templates for the sequential electrodeposition of silver, cobalt, and gold which served as the backside electrical contact, ohmic contact metal and catalyst metal for VLS growth, respectively. Boron-doped silicon nanowires were then synthesized within the pores by VLS growth using silane (SiH4) and trimethylboron (TMB) gas sources. Arrays of Al dots were deposited on the top surface of the membrane after nanowire growth. A series of samples was prepared with different SiNW lengths and boron doping levels. Two point probe measurements were used to measure the I-V characteristics of the silicon nanowire arrays before and after annealing. Nanowire resistivity and contact resistance were determined from plots of resistance versus nanowire length. The resistivity of the SiNW was observed to decrease with the addition of TMB during growth.

Electron Transportation Behavior in Single Crystal Silicon Nanowires

2010 ◽  
Author(s):  
Yu C. Shih ◽  
Chuin S. Chen ◽  
Chih T. Lin ◽  
Kuang C. Wu
Keyword(s):  
Silicon Nanowires ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Principle Calculation ◽  
First Principle Calculation ◽  
Boron Doped ◽  
Doped Silicon ◽  
Electron Transport Properties ◽  
Transportation Behavior ◽  
Electron Transportation

The electron transport properties of the highly boron-doped <110>-Silicon nanowires were investigated by first principle calculation with nonequilibrium Green’s function. We found that the highly doped silicon nanowires become metallic and the conductance drops as the undoped region increases.

Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

2009 ◽  
Vol 95 (16) ◽  
pp. 162101 ◽  
Author(s):  
Ruth A. Schlitz ◽  
Daniel E. Perea ◽  
Jessica L. Lensch-Falk ◽  
Eric R. Hemesath ◽  
Lincoln J. Lauhon
Keyword(s):  
Electrical Properties ◽  
Silicon Nanowires ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Room Temperature Strong Infra-Red Light Emission of Boron Doped Silicon Nanowires

2010 ◽  
Vol 16 (S2) ◽  
pp. 824-825
Author(s):  
F Fabbri ◽  
L Lazzarini ◽  
G Salviati ◽  
N Fukata
Keyword(s):  
Silicon Nanowires ◽  
Room Temperature ◽  
Light Emission ◽  
Red Light ◽  
Boron Doped ◽  
Infra Red ◽  
Doped Silicon

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Sign in / Sign up

Export Citation Format

Share Document