Reliable determination of the few-layer graphene oxide thickness using Raman spectroscopy

2015 ◽  
Vol 47 (4) ◽  
pp. 391-394 ◽  
Author(s):  
Dmytro Kostiuk ◽  
Michal Bodik ◽  
Peter Siffalovic ◽  
Matej Jergel ◽  
Yuriy Halahovets ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
Oxide Thickness ◽  
Reliable Determination ◽  
Layer Graphene ◽  
Few Layer Graphene

scholarly journals Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Intrinsic Properties ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Layer Graphene ◽  
A Value ◽  
Few Layer Graphene

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

Facile Synthesis of Few-Layer Graphene Oxide from Cinnamomum camphora

2021 ◽  
Vol 16 (2) ◽  
pp. 183-187
Author(s):  
Athiyanam Venkatesan Ramya ◽  
Neethu Joseph ◽  
Manoj Balachandran
Keyword(s):  
Graphene Oxide ◽  
Cinnamomum Camphora ◽  
Facile Synthesis ◽  
Layer Graphene ◽  
Few Layer Graphene

Oil Lubricant Tribological Behaviour Improvement Through Dispersion of Few Layer Graphene Oxide

2014 ◽  
Vol 14 (7) ◽  
pp. 4960-4968 ◽  
Author(s):  
Maria Sarno ◽  
Adolfo Senatore ◽  
Claudia Cirillo ◽  
Vincenzo Petrone ◽  
Paolo Ciambelli
Keyword(s):  
Graphene Oxide ◽  
Tribological Behaviour ◽  
Layer Graphene ◽  
Few Layer Graphene

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 567-570 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Light Scattering ◽  
Graphene Layer ◽  
Monolayer Graphene ◽  
Spectroscopy Study ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Few Layer Graphene

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

Raman Spectroscopy as a Tool to Address Individual Graphene Layers in Few-Layer Graphene

2012 ◽  
Vol 116 (35) ◽  
pp. 19046-19050 ◽  
Author(s):  
Martin Kalbac ◽  
Jing Kong ◽  
Mildred S. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Few Layer Graphene

Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms

2014 ◽  
Vol 778-780 ◽  
pp. 1162-1165
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nicholas Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Solid Phase ◽  
Formation Mechanisms ◽  
Layer By Layer ◽  
Phase Growth ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force ◽  
High Temperature Stage ◽  
Few Layer Graphene

This work presents experimental evidence of the formation mechanisms of few-layer graphene (FLG) films on SiC by nickel silicidation. FLG is formed by annealing of a 40 nm thick Ni layer on 6H-SiC at 1035ºC for 60 s, resulting in a Ni2Si layer which may be capped by any Ni that did not react during annealing. It has been proposed that FLG forms on top of the Ni during the high temperature stage. In contrast, during cooling, carbon atoms which were released during the silicidation reaction may diffuse back towards the Ni2Si/SiC interface to form a second FLG film. After annealing, layer-by-layer de-processing was carried out in order to unequivocally identify the FLG at each location using Atomic force microscopy (AFM) and Raman spectroscopy.

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