Ferroelectric Q and antiferroelectric P phases' coexistence and local phase transitions in oxygen-deficient NaNbO3 single crystal: micro-Raman, dielectric and dilatometric studies

2012 ◽  
Vol 43 (8) ◽  
pp. 1141-1145 ◽  
Author(s):  
R. A. Shakhovoy ◽  
S. I. Raevskaya ◽  
L. A. Shakhovaya ◽  
D. V. Suzdalev ◽  
I. P. Raevski ◽  
...  
2020 ◽  
Vol 153 (22) ◽  
pp. 224202
Author(s):  
Irena Jankowska-Sumara ◽  
Mariola Kądziołka-Gaweł ◽  
Maria Podgórna ◽  
Andrzej Majchrowski ◽  
Krystian Roleder

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.


2015 ◽  
Vol 652 ◽  
pp. 287-291 ◽  
Author(s):  
Xiaojuan Li ◽  
Zengzhe Xi ◽  
Peng Liu ◽  
Wei Long ◽  
Pinyang Fang

1984 ◽  
Vol 53 (8) ◽  
pp. 2600-2605 ◽  
Author(s):  
Hideyo Yoshida ◽  
Hiroaki Takemasa ◽  
Yasuo Oshino ◽  
Yasuharu Makita

2018 ◽  
Vol 19 (1) ◽  
pp. 506-512 ◽  
Author(s):  
Sylvia L. Hanna ◽  
Xuan Zhang ◽  
Ken-ichi Otake ◽  
Riki J. Drout ◽  
Peng Li ◽  
...  

2019 ◽  
Vol 75 (a2) ◽  
pp. e429-e429
Author(s):  
Daria Andronikova ◽  
Iurii Bronwald ◽  
Alexei Bosak ◽  
Dmitry Chernyshov ◽  
Alexey Filimonov ◽  
...  

2018 ◽  
Vol 74 (11) ◽  
pp. 1222-1242 ◽  
Author(s):  
Santiago Reinoso ◽  
Beñat Artetxe ◽  
Juan M. Gutiérrez-Zorrilla

Single-crystal-to-single-crystal transformations are solid-state phase transitions between different crystalline states in which the crystal integrity and the long-range structural order are retained through the whole transformation process. Such a phenomenon constitutes the structural response that some compounds afford when being exposed to a given external stimulus (temperature, pressure, light, etc.) and, therefore, its study has become a relevant focus of interest within crystal engineering because it allows for monitoring how certain properties (colour, magnetism, luminescence, porosity) of the stimuli-responsive material are modified as the structure evolves into the activated form. A range of organic, inorganic and hybrid systems have been found to undergo such phase transitions, but these examples only include a small number of compounds that incorporate polyoxometalate anions, among which the removal of guest solvent molecules (dehydration) stands out as the most common external stimulus able to induce the occurrence of a single-crystal-to-single-crystal transformation. This feature article compiles the examples of dehydration-triggered single-crystal-to-single-crystal transformation studies that have been reported to date for polyoxometalate-based compounds and reviews some of their most relevant structural aspects.


1989 ◽  
Vol 14 (8) ◽  
pp. 383-387 ◽  
Author(s):  
Yasuhiro KUDOH ◽  
Hiroshi TAKEDA ◽  
Haruo OHASHI

2021 ◽  
Vol 2057 (1) ◽  
pp. 012048
Author(s):  
N I Matskevich ◽  
V N Shlegel ◽  
A A Chernov ◽  
D A Samoshkin ◽  
S V Stankus ◽  
...  

Abstract The heat capacity of lithium tungstate single crystal (Li2WO4) was measured for the first time in the temperature range of 319-997 K. The experiments were carried out by DSC calorimetry. The Li2WO4 single crystal was first grown by low-temperature-gradient Czochralski technique with weight control. The temperature dependence of Li2WO4 heat capacity in the temperature range 319-997 K was monotonic. According to results of our studies, there were no phase transitions in Li2WO4 in the investigated temperature range.


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