Interfacial electronic properties of AuGaAs interfaces studied by photomodulation Raman spectroscopy (pump-probe technique)

2011 ◽  
Vol 42 (2) ◽  
pp. 149-152 ◽  
Author(s):  
T. A. El-Brolossy ◽  
S. Negm ◽  
H. Talaat
2005 ◽  
Vol 123 (15) ◽  
pp. 154309 ◽  
Author(s):  
A. Rouzée ◽  
V. Boudon ◽  
B. Lavorel ◽  
O. Faucher ◽  
W. Raballand

2011 ◽  
Author(s):  
Lirong Ge ◽  
Min Shui ◽  
Xiao Jin ◽  
Zhongguo Li ◽  
Yinglin Song

2012 ◽  
Vol 111 (10) ◽  
pp. 103531 ◽  
Author(s):  
S. Adachi ◽  
R. Kaji ◽  
S. Furukawa ◽  
Y. Yokoyama ◽  
S. Muto

Author(s):  
М.В. Лебедев ◽  
Т.В. Львова ◽  
А.Н. Смирнов ◽  
В.Ю. Давыдов

Photoluminescence and Raman spectroscopy are used to study the electronic properties of n-InP(100) surfaces passivated with different sulfide solutions. Such a passivation results in the increase in photoluminescence intensity of the semiconductor evidencing for the reduction in the surface recombination velocity. The increase in the photoluminescence intensity is accompanied by the narrowing of the surface depletion layer, as well as by the increase of the electron density in the probed volume of InP. The efficiency of electronic passivation of the n-InP(100) surface depends on the composition of the sulfide solution.


nano Online ◽  
2016 ◽  
Author(s):  
Alberto Milani ◽  
Matteo Tommasini ◽  
Valeria Russo ◽  
Andrea Li Bassi ◽  
Andrea Lucotti ◽  
...  

Nano Letters ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 7075-7084 ◽  
Author(s):  
Claudia Fasolato ◽  
Marta De Luca ◽  
Doriane Djomani ◽  
Laetitia Vincent ◽  
Charles Renard ◽  
...  

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