Applications of Statistical Regression and Modeling in Fill–Finish Process Development of Structurally Related Proteins

2011 ◽  
Vol 100 (2) ◽  
pp. 464-481 ◽  
Author(s):  
Ge Jiang ◽  
Abhinaya Thummala ◽  
Manpreet-Vick S. Wadhwa
Keyword(s):  
Process Development ◽  
Statistical Regression ◽  
Finish Process ◽  
Related Proteins

Advanced TEM sample preparation techniques for submicron Si devices

1995 ◽  
Vol 53 ◽  
pp. 516-517 ◽  
Author(s):  
P. B. Basham ◽  
H. L. Tsai
Keyword(s):  
Sample Preparation ◽  
Process Development ◽  
Light Transmission ◽  
Specific Area ◽  
Turnaround Time ◽  
Small Hole ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Polished Side ◽  
Preparation Techniques

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

DNA-fragmentation and expression of apoptosis-related proteins in experimentally denervated and reinnervated rat facial muscle

1997 ◽  
Vol 23 (3) ◽  
pp. 141-149 ◽  
Author(s):  
D. S. Tews ◽  
H. H. Goebel ◽  
I. Schneider ◽  
A. Gunkel ◽  
E. Stennert ◽  
...  
Keyword(s):  
Dna Fragmentation ◽  
Facial Muscle ◽  
Related Proteins

Characterization of embryogenesis-related proteins in alfalfa (Medicago sativa)

1996 ◽  
Vol 96 (4) ◽  
pp. 585-592 ◽  
Author(s):  
Randal W. Giroux ◽  
K. Peter Pauls
Keyword(s):  
Medicago Sativa ◽  
Related Proteins

Influence of AUF1 targeting siRNA on cell cycle-related proteins in thyroid cancer cell lines

2006 ◽  
Vol 114 (S 1) ◽  
Author(s):  
B Trojanowicz ◽  
Z Chen ◽  
J Bialek ◽  
Y Radestock ◽  
S Hombach-Klonisch ◽  
...  
Keyword(s):  
Cell Cycle ◽  
Thyroid Cancer ◽  
Cell Lines ◽  
Cancer Cell ◽  
Cancer Cell Lines ◽  
Thyroid Cancer Cell ◽  
Thyroid Cancer Cell Lines ◽  
Related Proteins

386-P: Acute Hypoglycemia Does Not Alter Serum Levels of Amyloid-Related Proteins Associated with Dementia

Diabetes ◽  
2020 ◽  
Vol 69 (Supplement 1) ◽  
pp. 386-P
Author(s):  
ABU MOIN ◽  
THOZHUKAT SATHYAPALAN ◽  
STEPHEN ATKIN ◽  
ALEXANDRA E. BUTLER
Keyword(s):  
Serum Levels ◽  
Acute Hypoglycemia ◽  
Related Proteins
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