Generic high-frequency small-signal look-up table model extraction for Si-Ge heterojunction bipolar transistors

2014 ◽  
Vol 27 (5-6) ◽  
pp. 923-934
Author(s):  
Seyed Majid Homayouni ◽  
Bart Nauwelaers ◽  
Dominique M. M.-P. Schreurs
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors ◽  
Small Signal ◽  
Model Extraction ◽  
Look Up Table ◽  
Table Model

SiGe Heteroepitaxy for High Frequency Circuits

1998 ◽  
Vol 525 ◽  
Author(s):  
B. Tillack ◽  
D. Bolze ◽  
G. Fischer ◽  
G. Kissinger ◽  
D. Knoll ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Defect Density ◽  
Process Capability ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Capability Indices ◽  
Data Points ◽  
B Doping ◽  
The Stability

ABSTRACTWe have determined the process capability of Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(RT)CVD) of epitaxial Si/SiGe/Si stacks for heterojunction bipolar transistors (HIBTs). The transistor parameters primarily influenced by the epitaxial characteristics were measured for 600 identically processed 4” wafers. The results demonstrate that it is possible to control accurately the epitaxial process for a 25 nm thick graded SiGe base profile with 20 % Ge and very narrow B doping (5 nm). The pipe limited device yield of about 90 % for an emitter area of 104 μm2 indicates a very low defect density in the epitaxial layer stack. The process capability indices determined from about 40,000 data points demonstrate the stability and capability of the LP(RT)CVD epitaxy with regard to manufacturing requirements.

A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model

2005 ◽  
Vol 10 (2) ◽  
pp. 405-409
Author(s):  
Shi Xin-zhi ◽  
Liu Hai-wen ◽  
Sun Xiao-wei ◽  
Che Yan-feng ◽  
Cheng Zhi-qun ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Extraction Method ◽  
Parameter Extraction ◽  
Bipolar Transistors ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model

A 55-GHz-Small-Signal-Bandwidth Switched Emitter Follower in InP Heterojunction Bipolar Transistors

2012 ◽  
pp. 419-423
Author(s):  
Julien Deza ◽  
Achour Ouslimani ◽  
Agnieszka Konczykowska ◽  
Abed-Elhak Kasbari ◽  
Jean Godin ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Small Signal ◽  
Emitter Follower

High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

2003 ◽  
Author(s):  
T.I. Kamins ◽  
K. Nauka ◽  
L.H. Camnitz ◽  
J.B. Kruger ◽  
J.E. Turner ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors

Growth of High Frequency SiGe Heterojunction Bipolar Transistors Structures

2002 ◽  
Vol T101 (1) ◽  
pp. 45 ◽  
Author(s):  
H. H. Radamson ◽  
B. Mohadjeri ◽  
C. Menon ◽  
A. Bentzen ◽  
J. Grahn ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors
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