Prediction of the density of interfacial state produced by radiation in NMOS

2013 ◽  
Vol 27 (5-6) ◽  
pp. 915-922
Author(s):  
Liu Changshi ◽  
Li Feng
Keyword(s):  
Interfacial State

Laser-induced interfacial state changes enable tuning of the Schottky-barrier height in SiC

2019 ◽  
Vol 469 ◽  
pp. 68-75 ◽  
Author(s):  
Zhenyuan Lin ◽  
Lingfei Ji ◽  
Yan Wu ◽  
Liting Hu ◽  
Tianyang Yan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
State Changes ◽  
Interfacial State

Interfacial state and magnetic properties of Nd-Fe-B/Nd thin films

2009 ◽  
Vol 105 (7) ◽  
pp. 07A741 ◽  
Author(s):  
Masashi Matsuura ◽  
Satoshi Sugimoto ◽  
Ryota Goto ◽  
Nobuki Tezuka
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Interfacial State

scholarly journals Optical nonlinearity of ZnO microcrystallite enhanced by interfacial state

2005 ◽  
Vol 13 (23) ◽  
pp. 9211 ◽  
Author(s):  
Y. B. Han ◽  
J. B. Han ◽  
S. Ding ◽  
D. J. Chen ◽  
Q. Q. Wang
Keyword(s):  
Optical Nonlinearity ◽  
Interfacial State

Optimization of 4H-SiC MOS Properties with Cesium Implantation

2008 ◽  
Vol 600-603 ◽  
pp. 751-754 ◽  
Author(s):  
Y. Wang ◽  
T. Khan ◽  
T. Paul Chow
Keyword(s):  
Low Frequency ◽  
Conduction Band Edge ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Oxide Charge ◽  
Charge Densities ◽  
Effective Oxide Charge ◽  
Flatband Voltage ◽  
State Densities ◽  
Interfacial State

The effect of incorporation of cesium with implantation on the electrical characteristics of SiO2/4H-SiC interface has been evaluated using MOS capacitors. With a cesium dosage of 1012 and 3x1012 cm-2 on deposited oxide re-oxidized in steam, effective oxide charge densities of - 1.4x1012 and -7.5x1011 cm-2 respectively were extracted and a cesium implant activation percentage of 33% was estimated from flatband voltage shift. Also, corresponding interfacial state densities of 2.5x1013 and 1.8x1013 cm-2-eV-1 near the conduction band edge were extracted from High-Low frequency C-V technique, showing a decreasing Dit with increasing Cs dosage.

scholarly journals Effect of Cu addition on coercivity and interfacial state of Nd-Fe-B/Nd-rich thin films

2010 ◽  
Vol 200 (8) ◽  
pp. 082019 ◽  
Author(s):  
M Matsuura ◽  
S Sugimoto ◽  
T Fukada ◽  
R Goto ◽  
N Tezuka
Keyword(s):  
Thin Films ◽  
Interfacial State

Schottky barrier height and interfacial state density on oxide-GaAs interface

2003 ◽  
Vol 94 (1) ◽  
pp. 348-353 ◽  
Author(s):  
J. S. Hwang ◽  
C. C. Chang ◽  
M. F. Chen ◽  
C. C. Chen ◽  
K. I. Lin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
State Density ◽  
Interfacial State
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