Variation in the analytical figure of merit for in‐situ Hf isotopic measurements by LA‐MC‐ICPMS in zircon standards at variable spatial resolutions

2021 ◽  
Author(s):  
Saurabh Singhal ◽  
Sandeep Singh ◽  
Dharmendra Singh
Keyword(s):  
Figure Of Merit ◽  
Isotopic Measurements ◽  
Analytical Figure Of Merit

In situ isotopic analysis of uranium using a new data acquisition protocol for 1013 ohm Faraday amplifiers

2021 ◽  
Author(s):  
Kota Yamamoto ◽  
Hisashi Asanuma ◽  
Hiroaki Takahashi ◽  
Takafumi Hirata
Keyword(s):  
Data Acquisition ◽  
Data Reduction ◽  
Reduction Method ◽  
Isotopic Analysis ◽  
High Gain ◽  
Transient Signals ◽  
Acquisition Protocol ◽  
Data Reduction Method ◽  
Isotopic Measurements

New data reduction method for isotopic measurements using high-gain Faraday amplifiers enables precise uranium isotopic analysis even from transient signals.

In-situ TEM Study of Bismuth Nanostructures

2007 ◽  
Vol 1044 ◽  
Author(s):  
Xiaoting Jia ◽  
Vincent Berube ◽  
Shuo Chen ◽  
Bed Poudel ◽  
Son Hyungbin ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Structural Behavior ◽  
In Situ Tem ◽  
Electrical Measurements ◽  
Dimensionless Figure Of Merit ◽  
Bi Nanoparticles ◽  
Nanostructured Thermoelectric Materials

AbstractNanostructured thermoelectric materials have attracted lots of interest in recent years, due to their enhanced performance determined by their thermoelectric dimensionless figure of merit. However, because of equipment limitations, not much work has been done on combining simultaneous transport measurements and structural characterization on individual nanostructured thermoelectric materials. With an integrated TEM-STM system, we studied the structural behavior and electrical properties of bismuth (Bi) nanobelts and nanoparticles. Results showed that clean Bi nanostructures free of oxides can be produced by in-situ high temperature electro-migration and Joule annealing processes occurring within the electron microscope. Preliminary electrical measurements indicate a conductivity of two orders of magnitude lower for Bi nanoparticles than that for bulk Bi. Such in-situ studies are highly advantageous for studying the semimetal-semiconductor transition and how this transition could enhance thermoelectric properties.

Enhanced thermoelectric performance of GeTe through in situ microdomain and Ge-vacancy control

2019 ◽  
Vol 7 (25) ◽  
pp. 15181-15189 ◽  
Author(s):  
Khasim Saheb Bayikadi ◽  
Raman Sankar ◽  
Chien Ting Wu ◽  
Chengliang Xia ◽  
Yue Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Vacancy Level

The thermoelectric figure-of-merit (ZT) for GeTe powder is able to be raised from ∼0.8 to 1.37 at high temperature near ∼500 °C by tuning the Ge vacancy level through a reversible in situ route.

In-Situ Chemical and Isotopic Measurements of the Atmosphere of Jupiter

1998 ◽  
pp. 1057-1064
Author(s):  
P. R. Mahaffy ◽  
S. K. Atreya ◽  
H. B. Niemann ◽  
T. C. Owen
Keyword(s):  
Isotopic Measurements

Raising the Thermoelectric Performance of Fe3CoSb12 Skutterudites via Nd Filling and In-Situ Nanostructuring

2016 ◽  
Vol 16 (4) ◽  
pp. 3841-3847 ◽  
Author(s):  
Lijie Guo ◽  
Zhengwei Cai ◽  
Xiaolong Xu ◽  
Kunling Peng ◽  
Guiwen Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Large Reduction ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma

p-type skutterudites NdxFe3CoSb12 with x equaling 0.8, 0.85, 0.9, 0.95, 1.0 have been synthesized by solid state reaction followed by spark plasma sintering. The influence of Nd filling on electrical and thermal transport properties has been investigated in the Nd-filled skutterudite compounds in the temperature range from room temperature to 800 K. It was found that the Seebeck coefficient is drastically enhanced via filling Nd in p-Type skutterudites as well as the corresponding power factor although electrical conductivity is reduced. In addition, a large reduction in thermal conductivity is achieved by Nd fillers through rattling effect along with the In-Situ nanostructured precipitate through scattering phonons with much wider frequency. These concomitant effects result in an enhanced thermoelectric performance with the dimensionless figure of merit ZT. These observations demonstrate an exciting scientific opportunity to raise the figure-of-merit of p-type skutterudites.

MeV Si Ions Bombardment Effects on the Properties of Nano-Layers of SiO2/SiO2+Ag

2008 ◽  
Vol 1074 ◽  
Author(s):  
Sadik Guner ◽  
Satilmis Budak ◽  
Claudiu I Muntele ◽  
Cydale C Smith ◽  
Daryush Ila
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Layered Structure ◽  
Figure Of Merit ◽  
Rutherford Backscattering Spectrometry ◽  
Conductivity Measurement ◽  
Electronic Energy ◽  
Before And After

ABSTRACTWe have grown 100 periodic SiO2/SiO2+Ag multi-nano-layered systems where the SiO2+Ag layers were 7.26 nm and SiO2 buffer layer were 4 nm, total thickness is 563 nm. Using interferometer as well as in-situ thickness monitoring, we measured the thickness of the layers; using Rutherford Backscattering Spectrometry (RBS) measured the concentration and distribution of Ag in SiO2. The electrical conductivity, thermal conductivity and the Seebeck coefficient of the layered structure were measured at room temperature before and after bombardment by 5 MeV Si ions. The energy of the Si ions were chosen such that the ions are stopped in the silicon substrate and only electronic energy due to ionization is deposited in the layered structure. The electrical conductivity measured using Van der Pauw method. Thermal conductivity of the thin films was measured using an in-house built 3ω thermal conductivity measurement system. Using the measured Seebeck coefficient, thermal conductivity and electrical conductivity we calculated the figure of merit (ZT). We will report our findings of change in the figure of merit as a function of the bombardment fluence.

High vibration damping in in situ In–Zn composites

2015 ◽  
Vol 08 (05) ◽  
pp. 1550059 ◽  
Author(s):  
Samuel P. Balch ◽  
Roderic S. Lakes
Keyword(s):  
Viscoelastic Properties ◽  
Figure Of Merit ◽  
Vibration Damping ◽  
Small Concentration ◽  
Frequency Range ◽  
Viscoelastic Composite ◽  
In Situ Composites ◽  
Platelet Morphology ◽  
Better Than

Indium–zinc in situ composites were fabricated and their viscoelastic properties studied over 8.5 decades of frequency. Material with 5% indium by weight was found to have a stiffness damping product (the figure of merit for damping layers) of 1.9 GPa at 10 Hz; 3 times better than the peak of polymer damping layers and over a wider frequency range. Material with 15% indium had a stiffness damping product of 1.8 GPa. The indium segregated in a platelet morphology, particularly favorable for attaining high damping from a small concentration, as predicted by viscoelastic composite theory.

In situ nanostructure design leading to a high figure of merit in an eco-friendly stable Mg2Si0.30Sn0.70 solid solution

RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16824-16831 ◽  
Author(s):  
Kang Yin ◽  
Xianli Su ◽  
Yonggao Yan ◽  
Ctirad Uher ◽  
Xinfeng Tang
Keyword(s):  
Phase Diagram ◽  
Solid Solution ◽  
Figure Of Merit ◽  
Binary Phase Diagram ◽  
Binary Phase ◽  
High Figure ◽  
The Relationship

The relationship between the temperature and the composition as well as the microstructure of a Sb-doped Mg2Si0.30Sn0.70 solid solution was systematically studied according to the Mg2Si–Mg2Sn pseudo-binary phase diagram.

scholarly journals Homo-composition and hetero-structure nanocomposite Pnma Bi2SeS2 - Pnnm Bi2SeS2 with high thermoelectric performance

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Bushra Jabar ◽  
Fu Li ◽  
Zhuanghao Zheng ◽  
Adil Mansoor ◽  
Yongbin Zhu ◽  
...  
Keyword(s):  
Phase Transition ◽  
Figure Of Merit ◽  
Structural Difference ◽  
Ex Situ ◽  
Second Phase ◽  
General Strategy ◽  
Hetero Structure ◽  
High Figure ◽  
Two Phases

AbstractNanocomposite engineering decouples the transport of phonons and electrons. This usually involves the in-situ formation or ex-situ addition of nanoparticles to a material matrix with hetero-composition and hetero-structure (heC-heS) interfaces or hetero-composition and homo-structure (heC-hoS) interfaces. Herein, a quasi homo-composition and hetero-structure (hoC-heS) nanocomposite consisting of Pnma Bi2SeS2 - Pnnm Bi2SeS2 is obtained through a Br dopant-induced phase transition, providing a coherent interface between the Pnma matrix and Pnnm second phase due to the slight structural difference between the two phases. This hoC-heS nanocomposite demonstrates a significant reduction in lattice thermal conductivity (~0.40 W m−1 K−1) and an enhanced power factor (7.39 μW cm−1 K−2). Consequently, a record high figure-of-merit ZTmax = 1.12 (at 773 K) and a high average figure-of-merit ZTave = 0.72 (in the range of 323–773 K) are achieved. This work provides a general strategy for synergistically tuning electrical and thermal transport properties by designing hoC-heS nanocomposites through a dopant-induced phase transition.

Sign in / Sign up

Export Citation Format

Share Document