A new method for locating Kikuchi bands in electron backscatter diffraction patterns

2019 ◽  
Vol 82 (12) ◽  
pp. 2035-2041
Author(s):  
Yongsheng Zhang ◽  
Shangqiang Fang ◽  
Chucheng Lin ◽  
Jimei Zhang ◽  
Caifen Jiang ◽  
...  
Keyword(s):  
Electron Backscatter Diffraction ◽  
New Method ◽  
Electron Backscatter ◽  
Diffraction Patterns ◽  
Backscatter Diffraction

scholarly journals Crystal orientation and detector distance effects on resolving pseudosymmetry by electron backscatter diffraction

2021 ◽  
Vol 54 (2) ◽  
pp. 513-522
Author(s):  
Edward L. Pang ◽  
Christopher A. Schuh
Keyword(s):  
Crystal Orientation ◽  
Electron Backscatter Diffraction ◽  
Detector Distance ◽  
Recent Emergence ◽  
Distance Effects ◽  
Electron Backscatter ◽  
Sample Position ◽  
Position And Orientation ◽  
Diffraction Patterns ◽  
Backscatter Diffraction

Accurately indexing pseudosymmetric materials has long proven challenging for electron backscatter diffraction. The recent emergence of intensity-based indexing approaches promises an enhanced ability to resolve pseudosymmetry compared with traditional Hough-based indexing approaches. However, little work has been done to understand the effects of sample position and orientation on the ability to resolve pseudosymmetry, especially for intensity-based indexing approaches. Thus, in this work the effects of crystal orientation and detector distance in a model tetragonal ZrO2 (c/a = 1.0185) material are quantitatively investigated. The orientations that are easiest and most difficult to correctly index are identified, the effect of detector distance on indexing confidence is characterized, and these trends are analyzed on the basis of the appearance of specific zone axes in the diffraction patterns. The findings also point to the clear benefit of shorter detector distances for resolving pseudosymmetry using intensity-based indexing approaches.

scholarly journals A New Experimental Method for Determining the Thickness of Thin Surface Layers of Intensive Plastic Deformation Using Electron Backscatter Diffraction Data

Symmetry ◽  
2020 ◽  
Vol 12 (4) ◽  
pp. 677
Author(s):  
Alexander Smirnov ◽  
Evgeniya Smirnova ◽  
Sergey Alexandrov
Keyword(s):  
Plastic Deformation ◽  
Electron Backscatter Diffraction ◽  
Thin Layers ◽  
New Method ◽  
Metallic Materials ◽  
Surface Layers ◽  
Kernel Average Misorientation ◽  
Electron Backscatter ◽  
Properties Of Materials ◽  
Backscatter Diffraction

It is, in general, essential to investigate correlations between the microstructure and properties of materials. Plastic deformation often localizes within thin layers. As a result, many material properties within such layers are very different from the properties in bulk. The present paper proposes a new method for determining the thickness of a thin surface layer of intensive plastic deformation in metallic materials. For various types of materials, such layers are often generated near frictional interfaces. The method is based on data obtained by Electron Backscatter Diffraction. The results obtained are compared with those obtained by an alternative method based on microhardness measurements. The new method allows for determining the layer thickness of several microns in specimens after grinding. In contrast, the measurement of microhardness does not reveal the presence of this layer. The grain-based and kernel-based types of algorithms are also adopted for determining the thickness of the layer. Data processed by the strain contouring and kernel average misorientation algorithms are given to illustrate this method. It is shown that these algorithms do not clearly detect the boundary between the layer of intensive plastic deformation and the bulk. As a result, these algorithms are unable to determine the thickness of the layer with high accuracy.

Error analysis of the crystal orientations and disorientations obtained by the classical electron backscatter diffraction technique

2015 ◽  
Vol 48 (3) ◽  
pp. 797-813 ◽  
Author(s):  
Farangis Ram ◽  
Stefan Zaefferer ◽  
Tom Jäpel ◽  
Dierk Raabe
Keyword(s):  
Electron Diffraction ◽  
Electron Backscatter Diffraction ◽  
Diffraction Theory ◽  
Classical Electron ◽  
Accuracy Measure ◽  
Electron Backscatter ◽  
Analytical Accuracy ◽  
Precision And Accuracy ◽  
Diffraction Patterns ◽  
Backscatter Diffraction

The fidelity – that is, the error, precision and accuracy – of the crystallographic orientations and disorientations obtained by the classical two-dimensional Hough-transform-based analysis of electron backscatter diffraction patterns (EBSPs) is studied. Using EBSPs simulated based on the dynamical electron diffraction theory, the fidelity analysis that has been previously performed using the patterns simulated based on the theory of kinematic electron diffraction is improved. Using the same patterns, the efficacy of a Fisher-distribution-based analytical accuracy measure for orientation and disorientation is verified.

Many-beam dynamical simulation of electron backscatter diffraction patterns

2007 ◽  
Vol 107 (4-5) ◽  
pp. 414-421 ◽  
Author(s):  
Aimo Winkelmann ◽  
Carol Trager-Cowan ◽  
Francis Sweeney ◽  
Austin P. Day ◽  
Peter Parbrook
Keyword(s):  
Electron Backscatter Diffraction ◽  
Dynamical Simulation ◽  
Electron Backscatter ◽  
Diffraction Patterns ◽  
Backscatter Diffraction
Sign in / Sign up

Export Citation Format

Share Document