Vacuum Ultraviolet and Soft X-ray Photoelectron Spectroscopy of Liquid Beams Using a Hemispherical Photoelectron Spectrometer with a Multistage Differential Pumping System

2013 ◽  
Vol 60 (12) ◽  
pp. 1403-1410 ◽  
Author(s):  
Kiyoshi Nishizawa ◽  
Keijiro Ohshimo ◽  
Toshinori Suzuki
Keyword(s):  
Photoelectron Spectroscopy ◽  
Vacuum Ultraviolet ◽  
X Ray ◽  
Pumping System ◽  
Differential Pumping

Development of a high-precision XYZ translator and estimation of beam profile of the vacuum ultraviolet and soft X-ray undulator beamline BL-13B at the Photon Factory

2020 ◽  
Vol 27 (4) ◽  
pp. 923-933
Author(s):  
Yoshihiro Aiura ◽  
Kenichi Ozawa ◽  
Kazuhiko Mase ◽  
Makoto Minohara ◽  
Satoshi Suzuki
Keyword(s):  
High Precision ◽  
Photoelectron Spectroscopy ◽  
Vacuum Ultraviolet ◽  
Chemical Compositions ◽  
X Ray ◽  
Measurement Capability ◽  
Photon Factory ◽  
Experimental Apparatus ◽  
Elemental Analyses ◽  
Microscopic Measurement

A high-precision XYZ translator was developed for the microanalysis of electronic structures and chemical compositions on material surfaces by electron spectroscopy techniques, such as photoelectron spectroscopy and absorption spectroscopy, utilizing the vacuum ultraviolet and soft X-ray synchrotron radiation at an undulator beamline BL-13B at the Photon Factory. Using the high-precision translator, the profile and size of the undulator beam were estimated. They were found to strongly depend on the photon energy but were less affected by the polarization direction. To demonstrate the microscopic measurement capability of an experimental apparatus incorporating a high-precision XYZ translator, the homogeneities of an SnO film and a naturally grown anatase TiO2 single crystal were investigated using X-ray absorption and photoemission spectroscopies. The upgraded system can be used for elemental analyses and electronic structure studies at a spatial resolution in the order of the beam size.

scholarly journals Observation of Argon Lines at Normal Pressure in the Vacuum Ultraviolet

1972 ◽  
Vol 14 ◽  
pp. 563-564
Author(s):  
D. Müller ◽  
Ć. Vadla ◽  
V. Vujnović
Keyword(s):  
Vacuum Ultraviolet ◽  
Normal Pressure ◽  
Spectral Lines ◽  
Local Thermal Equilibrium ◽  
Ultraviolet Region ◽  
Pumping System ◽  
Hot Plasma ◽  
Differential Pumping ◽  
Inhomogeneous Gas ◽  
Vacuum Monochromator

A normal pressure arc having local thermal equilibrium, is a useful source for measurements of atomic parameters in the vacuum ultraviolet region (Boldt, 1970). However, it imposes severe difficulties if the spectral lines ending on low-lying levels should be observed. The reason is the absorption effective in cold and inhomogeneous gas layers intervening in the optical path between the homogeneous hot plasma column and the vacuum monochromator. Here a version of a cascade arc with a differential pumping system is described which makes possible the observation of argon resonance lines at 1067 and 1048 Å, considerably free of absorption. For this purpose it was found necessary to use a bored anode as a pumping port.

Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers

1999 ◽  
Vol 14 (9) ◽  
pp. 3525-3529 ◽  
Author(s):  
Valentin Craciun ◽  
Ian W. Boyd ◽  
Jacques Perriere ◽  
Bernie Hutton ◽  
Edward J. Nicholls
Keyword(s):  
Photoelectron Spectroscopy ◽  
Vacuum Ultraviolet ◽  
Nuclear Reactions ◽  
Rutherford Backscattering Spectrometry ◽  
Sige Layer ◽  
X Ray ◽  
Si Substrates ◽  
Dielectric Layers ◽  
Nanocrystalline Particle ◽  
Crystalline Core

Thin Si0.8Ge0.2 layers epitaxially grown on (100) Si substrates were oxidized at temperatures from 150 to 450 °C under vacuum ultraviolet (VUV) radiation emitted by an excimer lamp working with Xe (λ = 172 nm). The structure and composition of the grown dielectric layers were investigated by Rutherford backscattering spectrometry, nuclear reactions analysis, ellipsometry, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy. These investigations have shown that, during the VUV-assisted oxidation process, Ge atoms were initially rejected from the grown SiO2 layer even at temperatures as low as those employed here. After a certain quantity of Ge accumulated at the interface, nanocrystalline Ge regions were directly excised from the remaining SiGe layer becoming embedded within the advancing SiO2 layer. The layers containing these nanocrystalline Ge particles exhibited the same visible photoluminescence spectra as those recorded from layers already known to contain nanocrystalline Ge or GeO2 particles, porous Ge, or nanocrystalline Ge particles exhibiting a different crystalline structure. This seems to indicate that the shell region of the nanocrystalline particle, and not its crystalline core, is the source of the photoluminescence.

Radiation Effects Of Vacuum Ultraviolet Laser Photons on Silicon Dioxide

1996 ◽  
Vol 439 ◽  
Author(s):  
K. Kurosawa ◽  
P. R. Herman ◽  
E. Z. Kurmaev ◽  
S. N. Shamin ◽  
V. E. Galakhov ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Emission Spectroscopy ◽  
Radiation Effects ◽  
Vacuum Ultraviolet ◽  
Single Photon ◽  
Photon Absorption ◽  
Bandgap Energy ◽  
Absorption Process ◽  
X Ray ◽  
Emission Studies

AbstractThe argon excimer laser provides 9.8-eV photons that readily surmount the electronic bandgap energy of SiO2 (∼9.0 eV), directly generating excitons in a single-photon absorption process. We have shown by Si L2,3 (Si 3s→2p) X-ray emission spectroscopy, Si 2p X-ray photoelectron spectroscopy and Raman spectroscopy that this absorption process is responsible for silicon precipitation in the silica. The X-ray emission studies further show that the silicon precipitates are crystalline, forming in highest concentration in 120–230 nm layer beneath the laserirradiated surface. Silicon precipitation was not observed on samples irradiated with 146-nm krypton excimer radiation due to a smaller 8.5-eV photon energy that is below the silica bandgap.

Die Bestimmung der Dissoziationsenergie des F2-Moleküls und ein Beitrag zu seinem Bandenspektrum

1968 ◽  
Vol 23 (4) ◽  
pp. 486-491 ◽  
Author(s):  
W. Stricker ◽  
L. Krauss
Keyword(s):  
Absorption Band ◽  
Light Source ◽  
Dissociation Energy ◽  
Emission Band ◽  
Vacuum Ultraviolet ◽  
Visible Region ◽  
Normal Incidence ◽  
Band Spectrum ◽  
Pumping System ◽  
Differential Pumping

The absorption band spectrum of fluorine has been observed in the extreme vacuum ultraviolet using the Hopfield continuum as light source. The spectrum was photographied by means of a 3 m Hilger normal incidence spectrograph fitted with a differential pumping system. From a rapidly converging v′-progression of bands at 877-857 Å the dissociation energy of the F2-molecule in the groundstate has been established as (1.44 ± 0.07) eV. In connection with the emission band spectrum of F2 in the visible it has been possible to determine the states of the participating transitions in the ultraviolet as well as in the visible region.

scholarly journals Upgrade of the SPECIES beamline at the MAX IV Laboratory

2021 ◽  
Vol 28 (2) ◽  
pp. 588-601
Author(s):  
Esko Kokkonen ◽  
Felipe Lopes da Silva ◽  
Mikko-Heikki Mikkelã ◽  
Niclas Johansson ◽  
Shih-Wen Huang ◽  
...  
Keyword(s):  
Storage Ring ◽  
Time Resolution ◽  
Photoelectron Spectroscopy ◽  
Vacuum Ultraviolet ◽  
Ambient Pressure ◽  
Elevated Pressure ◽  
X Ray ◽  
X Ray Scattering ◽  
Unique Capability ◽  
Ray Scattering

The SPECIES beamline has been transferred to the new 1.5 GeV storage ring at the MAX IV Laboratory. Several improvements have been made to the beamline and its endstations during the transfer. Together the Ambient Pressure X-ray Photoelectron Spectroscopy and Resonant Inelastic X-ray Scattering endstations are capable of conducting photoelectron spectroscopy in elevated pressure regimes with enhanced time-resolution and flux and X-ray scattering experiments with improved resolution and flux. Both endstations offer a unique capability for experiments at low photon energies in the vacuum ultraviolet and soft X-ray range. In this paper, the upgrades on the endstations and current performance of the beamline are reported.

scholarly journals In-Situ Photo-Dissociation and Polymerization of Carbon Disulfide with Vacuum Ultraviolet Microplasma Flat Lamp for Organic Thin Films

2021 ◽  
Vol 11 (6) ◽  
pp. 2597
Author(s):  
Jinhong Kim ◽  
Sung-Jin Park
Keyword(s):  
Carbon Disulfide ◽  
Photoelectron Spectroscopy ◽  
Vacuum Ultraviolet ◽  
Organic Thin Films ◽  
Liquid Droplets ◽  
Large Area ◽  
Free Standing ◽  
X Ray ◽  
Organic Precursors

Vacuum UV (VUV) photo-dissociation for a liquid phase organic compound, carbon disulfide (CS2), has been investigated. 172 nm (7.2 eV) VUV photons from Xe2* excimers in a microcavity plasma lamp irradiated free-standing liquid droplets on Si substrate in each a nitrogen environment and an atmospheric air environment. Selective and rapid dissociation of CS2 into C-C, C-S or C-O-S based fragments was observed in the different gas environments during the reaction. Thin-layered polymeric microdeposites have been identified by characterization with a Scanning electron microscope (SEM), Energy dispersive x-ray spectroscopy (EDX), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). This novel photo-process from the flat VUV microplasma lamp introduces another pathway of low-temperature organic (or synthetic) conversion for large area deposition. The in-situ, selective conversion of various organic precursors can be potentially used in optoelectronics and nanotechnology applications.

A differential pumping system to deliver windowless VUV photons at atmospheric pressure

2011 ◽  
Vol 18 (4) ◽  
pp. 546-549 ◽  
Author(s):  
Alexandre Giuliani ◽  
Isabelle Yao ◽  
Bruno Lagarde ◽  
Solenne Rey ◽  
Jean-Pierre Duval ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Atmospheric Pressure ◽  
Vacuum Ultraviolet ◽  
Pumping System ◽  
Optical Alignment ◽  
Ultraviolet Photons ◽  
Differential Pumping

In order to deliver VUV (vacuum ultraviolet) photons under atmospheric pressure conditions, a differential pumping system has been built on the DISCO beamline at the SOLEIL synchrotron radiation facility. The system is made of four stages and is 840 mm long. The conductance-limiting body has been designed to allow practicable optical alignment. VUV transmission of the system was tested under air, nitrogen, argon and neon, and photons could be delivered down to 60 nm (20 eV).

SURFACE STRUCTURE AND PROPERTIES OF MULTICOMPONENT MICROPATTERNED ORGANOSILANE MONOLAYERS PREPARED BY STEPWISE PHOTODECOMPOSITION AND CHEMISORPTION PROCESS

2002 ◽  
Vol 01 (05n06) ◽  
pp. 419-423 ◽  
Author(s):  
TOMOYUKI KOGA ◽  
MASAMICHI MORITA ◽  
HIROKI SAKATA ◽  
HIDEYUKI OTSUKA ◽  
ATSUSHI TAKAHARA
Keyword(s):  
Photoelectron Spectroscopy ◽  
Vacuum Ultraviolet ◽  
Lateral Force ◽  
Structure And Properties ◽  
Si Substrate ◽  
Site Specific ◽  
X Ray ◽  
Atomic Force ◽  
Ultraviolet Ray ◽  
Afm Observation

Multicomponent micropatterned organosilane monolayers were successfully fabricated on Si substrate by stepwise vacuum ultraviolet-ray (VUV) photodecomposition and chemisorption process. The area-specific introduction of different organosilane molecules was confirmed by X-ray photoelectron spectroscopy (XPS). Atomic force microscopic (AFM) observation and lateral force microscopic (LFM) measurement revealed that the line-widths of the micropatterned surface corresponded to those of photomask. Micropatterning of the functional groups influenced the magnitudes of the surface free energy. The patterned surface was also applied for the site-specific polymerization and site-specific adsorption of microparticles.

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