Thermodynamics and kinetics of initial gas phase reactions in chemical vapor deposition of titanium nitride. Theoretical study of TiCl4 ammonolysis

2001 ◽  
Vol 22 (13) ◽  
pp. 1366-1376 ◽  
Author(s):  
Stanislav Ya. Umanskii ◽  
Konstantin P. Novoselov ◽  
Airat Kh. Minushev ◽  
Magdalena Siodmiak ◽  
Gernot Frenking ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Gas Phase Reactions ◽  
Thermodynamics And Kinetics ◽  
Kinetics Of

A Theoretical Study of Condensation Processes in OMCVD of GaAs

1987 ◽  
Vol 94 ◽  
Author(s):  
S. K. Shastry
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Theoretical Study ◽  
Growth Models ◽  
Chemical Vapor ◽  
Growth Front ◽  
Hydrogen Chemisorption ◽  
The Past ◽  
Hydrogen Molecules ◽  
Kinetics Of

Kinetics of epitaxial growth of GaAs from trimethylgallium (TMG) and arsine in organometallic chemical vapor deposition (OMCVD) have been suggested in the past to occur according to the Langmuir-Hinshelwood (L-H) or Langmuir-Rideal (L-R) mechanism [1–3], where competitive chemisorption of the Ga- and As-containing species is assumed. In contrast, formation of sp3 bonds on the GaAs growth front suggests that the Ga-containing species are less likely to chemisorb onto Assites, while the As-containing species are less likely to chemisorb onto Ga-sites. In addition, an analysis of probable chemical reactions and the unlikely event of homogeneous dissociation of hydrogen molecules indicate that the chemisorption of hydrogen must be included in the growth kinetics. Since H-As and H-Ga bonds have similar characteristics, such hydrogen chemisorption probably occurs on all sites. Thus, a mix of selective (Ga, As) and competitive (H2) chemisorption processes is likely to be present in practice. Furthermore, the presence of chemisorbed hydrogen will alter the surface As bonds, which, in the absence of hydrogen, are known to dehybridize and dimerize[4]. These basic issues have not been addressed in existing OMCVD growth models. Therefore, an analysis of the adsorption and growth processes, in the epitaxy of (100)GaAs is presented in this paper, with particular attention to the above issues.

A Comprehensive Multiphysics, Multiscale Study of Reactor Chamber and Substrate Orientation Effects on Carbon Nanotube Synthesis During Chemical Vapor Deposition Process

2008 ◽  
Author(s):  
Mahmoud Reza Hosseini ◽  
Nader Jalili ◽  
David A. Bruce
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Temperature Profile ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Physical Property ◽  
Fabrication Process ◽  
Multiphase Model ◽  
Gas Phase Reactions

A comprehensive multiphysics, multiphase model of carbon nanotube (CNT) fabrication process by chemical vapor deposition (CVD) is utilized to study the effects of several physical phenomena inside the quartz tube. The investigations include fluid flow properties, temperature profile and heat transfer as well as diffusion and concentration of carbon species along the substrate. These properties are examined in a great detail for a horizontally placed substrate. For each physical property, the effects of substrate dislocation as well as the angle between substrate and reactor chamber longitudinal axis are investigated. It is shown that the temperature in the gas phase reactions region is significantly lower compared to the temperature profile around the substrate. Based on the obtained results, two new CVD system designs are proposed to enhance the temperature in the reactor chamber section where gas phase reactions take place. Moreover, it is shown that substrate dislocation and angle change result in physical property change such as species concentration on upper and lower substrate surfaces. This study is also applicable to other CVD-based fabrication process such as deposition of any layer, since the methodology of the fabrication process remains the same.

FTIR In Situ Studies of the Gas Phase Reactions in Chemical Vapor Deposition of SiC

1995 ◽  
Vol 142 (7) ◽  
pp. 2357-2362 ◽  
Author(s):  
S. Jonas ◽  
W. S. Ptak ◽  
W. Sadowski ◽  
E. Walasek ◽  
C. Paluszkiewicz
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Phase Reactions ◽  
In Situ Studies

Gas Phase Reactions Relevant to Chemical Vapor Deposition: Optical Diagnostics

1989 ◽  
Vol 168 ◽  
Author(s):  
D. Burgess
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Laser Photolysis ◽  
Particle Nucleation ◽  
Gas Phase Reactions ◽  
Decomposition Processes ◽  
Rate Of Reaction

AbstractLaser photolysis, optical emission, and laser-induced fluorescence (LIF) were used to investigate laser driven decomposition processes in the gas phase pertaining to the systems: SiH4 → Si (s) and SiH4 → NH3 → Si3N4 (s). These processes are important to silicon/ silicon-nitride chemical vapor deposition, flame-driven gas phase silicon-particle nucleation, and laser-induced processes for materials fabrication. UV laser photolysis was used to generate SiHx and NHx species from silane and ammonia. A number of photofragments were identified by emission from excited states. The rate of reaction of NH2 with silane was measured using LIF to detect NH2 as a function of time following photolysis of ammonia

Kinetics of Chemical Vapor Deposition of Titanium Nitride

1990 ◽  
Vol 137 (1) ◽  
pp. 322-328 ◽  
Author(s):  
Naruhiko Nakanishi ◽  
Satoru Mori ◽  
Eiichi Kato
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Of

Chemical Kinetics of Photoinduced Chemical Vapor Deposition: Silica Coating of Gas-Phase Nanoparticles

2011 ◽  
Vol 116 (1) ◽  
pp. 104-114 ◽  
Author(s):  
Adam M. Boies ◽  
Steven Calder ◽  
Pulkit Agarwal ◽  
Pingyan Lei ◽  
Steven L. Girshick
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Chemical Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silica Coating ◽  
Kinetics Of
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