Comparative corrosion performance of black oxide, sandblasted, and fine-drawn nitinol wires in potentiodynamic and potentiostatic tests: Effects of chemical etching and electropolishing

2004 ◽  
Vol 69B (2) ◽  
pp. 223-231 ◽  
Author(s):  
Svetlana Shabalovskaya ◽  
Gianni Rondelli ◽  
James Anderegg ◽  
J. P. Xiong ◽  
Ming Wu
Keyword(s):  
Chemical Etching ◽  
Corrosion Performance ◽  
Black Oxide

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

Metal-Assisted Plasma Etching of Silicon: A Liquid-Free Alternative to MACE

2018 ◽  
Author(s):  
Julia Sun ◽  
Benjamin Almquist
Keyword(s):  
Liquid Phase ◽  
Plasma Etching ◽  
Chemical Etching ◽  
Gold Films ◽  
Metallic Films ◽  
Au Catalyst ◽  
Feed Concentration ◽  
Catalytic Activities ◽  
Metal Assisted Chemical Etching ◽  
Complex Nanostructures

For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. Of these, two of the most common are reactive ion etching in the gaseous phase and metal-assisted chemical etching (MACE) in the liquid phase. Though these two methods are highly established and characterized, there is a surprising scarcity of reports exploring the ability of metallic films to catalytically enhance the etching of silicon in dry plasmas via a MACE-like mechanism. Here, we discuss a <u>m</u>etal-<u>a</u>ssisted <u>p</u>lasma <u>e</u>tch (MAPE) performed using patterned gold films to catalyze the etching of silicon in an SF<sub>6</sub>/O<sub>2</sub> mixed plasma, selectively increasing the rate of etching by over 1000%. The degree of enhancement as a function of Au catalyst configuration and relative oxygen feed concentration is characterized, along with the catalytic activities of other common MACE metals including Ag, Pt, and Cu. Finally, methods of controlling the etch process are briefly explored to demonstrate the potential for use as a liquid-free fabrication strategy.

ZERON 100

Alloy Digest ◽  
1993 ◽  
Vol 42 (11) ◽  
Keyword(s):  
Fracture Toughness ◽  
Stainless Steel ◽  
Corrosion Resistance ◽  
High Temperature ◽  
Duplex Stainless Steel ◽  
Heat Treating ◽  
Super Duplex Stainless Steel ◽  
Corrosion Performance ◽  
Temperature Performance ◽  
Offshore Oil

Abstract ZERON 100 is a super duplex stainless steel which is manufactured to give a guaranteed corrosion performance by using an equation to control the chemistry in those elements which will determine the corrosion resistance of the material. Major usages in seawater applications, particularly offshore oil gathering systems. This datasheet provides information on composition, hardness, and tensile properties as well as fracture toughness. It also includes information on low and high temperature performance as well as heat treating, machining, and joining. Filing Code: SS-555. Producer or source: Weir Material Services Ltd.

Fine MCP Decapsulation Technology Development

2006 ◽  
Author(s):  
Jianwei Zhou ◽  
Wei Zheng ◽  
Taekoo Lee
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Technology Development ◽  
New Technology ◽  
Ammonium Hydroxide ◽  
Mechanical Polishing ◽  
Technology Process ◽  
Tetra Methyl Ammonium Hydroxide ◽  
Die Surface

Abstract Multi-Chip Package (MCP) decapsulation is now becoming a rising problem. Because for traditional decapsulation method, acid can’t dissolve the top silicon die to expose the bottom die surface in MCP. It makes inspecting the bottom die in MCP is difficult. In this paper, a new MCP decapsulation technology combining mechanical polishing with chemical etching is introduced. This new technology can remove the top die quickly without damaging the bottom die using KOH and Tetra-Methyl Ammonium Hydroxide (TMAH). The technology process and relative application are presented. The factors that affect the KOH and TMAH etch rate are studied. The usage difference between the two etchant is discussed.

Backside Mechanical Preparation Methodology for Effective Failure Analysis on Small and Non-Exposed Die Paddle Package

2018 ◽  
Author(s):  
Ong Pei Hoon ◽  
Ng Kiong Kay ◽  
Gwee Hoon Yen
Keyword(s):  
Failure Analysis ◽  
Chemical Etching ◽  
Chemical Resistance ◽  
Etching Time ◽  
Lead Frame ◽  
Front Side ◽  
Electrical Measurements ◽  
Mechanical Preparation ◽  
Die Surface ◽  
Copper Lead

Abstract Chemical etching is commonly used in exposing the die surface from die front-side and die backside because of its quick etching time, burr-free and stress-free. However, this technique is risky when performing copper lead frame etching during backside preparation on small and non-exposed die paddle package. The drawback of this technique is that the copper leads will be over etched by 65% Acid Nitric Fuming even though the device’s leads are protected by chemical resistance tape. Consequently, the device is not able to proceed to any other further electrical measurements. Therefore, we introduced mechanical preparation as an alternative solution to replace the existing procedure. With the new method, we are able to ensure the copper leads are intact for the electrical measurements to improve the effectiveness and accuracy of physical failure analysis.

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