Thermally induced stresses and rapid temperature changes in teeth

1972 ◽  
Vol 6 (5) ◽  
pp. 305-325 ◽  
Author(s):  
Robert E. Barker ◽  
Robert F. Rafoth ◽  
Robert W. Ward
1991 ◽  
Vol 113 (3) ◽  
pp. 258-262 ◽  
Author(s):  
J. G. Stack ◽  
M. S. Acarlar

The reliability and life of an Optical Data Link transmitter are inversely related to the temperature of the LED. It is therefore critical to have efficient packaging from the point of view of thermal management. For the ODL® 200H devices, it is also necessary to ensure that all package seals remain hermetic throughout the stringent military temperature range requirements of −65 to +150°C. For these devices, finite element analysis was used to study both the thermal paths due to LED power dissipation and the thermally induced stresses in the hermetic joints due to ambient temperature changes


Author(s):  
C. S. Giggins ◽  
J. K. Tien ◽  
B. H. Kear ◽  
F. S. Pettit

The performance of most oxidation resistant alloys and coatings is markedly improved if the oxide scale strongly adheres to the substrate surface. Consequently, in order to develop alloys and coatings with improved oxidation resistance, it has become necessary to determine the conditions that lead to spallation of oxides from the surfaces of alloys. In what follows, the morphological features of nonadherent Al2O3, and the substrate surfaces from which the Al2O3 has spalled, are presented and related to oxide spallation.The Al2O3, scales were developed by oxidizing Fe-25Cr-4Al (w/o) and Ni-rich Ni3 (Al,Ta) alloys in air at 1200°C. These scales spalled from their substrates upon cooling as a result of thermally induced stresses. The scales and the alloy substrate surfaces were then examined by scanning and replication electron microscopy.The Al2O3, scales from the Fe-Cr-Al contained filamentary protrusions at the oxide-gas interface, Fig. 1(a). In addition, nodules of oxide have been developed such that cavities were formed between the oxide and the substrate, Fig. 1(a).


2014 ◽  
Vol 2014 (1) ◽  
pp. 000500-000504 ◽  
Author(s):  
Francy J. Akkara ◽  
Uday S. Goteti ◽  
Richard C. Jaeger ◽  
Michael C. Hamilton ◽  
Michael J. Palmer ◽  
...  

In certain applications, IC packages may be exposed to extreme temperatures and knowledge of thermally induced stress aids the prediction of performance degradation or failure of the IC. In the devices that are used in extreme conditions, the stress is caused mainly by the mismatch in expansion of various materials triggered by the different coefficients of thermal expansion. This work performed in this study is conducted using NMOS current mirror circuits that are cycled through a wide temperature range of −180°C to 80°C. These circuits are highly sensitive to stress and provide well-localized measurements of shear stress. The sensors are fabricated in such a way that the effects of certain stress components are isolated. These sensors are also temperature compensated so that only the effect of mechanical stress components is observed and changes in device performance due to temperature changes are minimal. Current readings obtained from the sensors are used to extract the shear stress component. Finite element simulations, using expected materials performance parameter information were also performed for similar packages and these results are compared to the measured results.


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