scholarly journals Comparison of the parasitic impedances from the drain‐source path of power transistor packages at up to 2 GHz

2021 ◽  
Author(s):  
Thomas Moldaschl ◽  
Stefan Woetzel ◽  
Riccardo Latella ◽  
Maurizio Galvano ◽  
Alfred Binder
Keyword(s):  
Power Transistor

2.5 W, C-band, GaAs/AlGaAs heterojunction bipolar power transistor

1989 ◽  
Vol 25 (15) ◽  
pp. 979 ◽  
Author(s):  
A.P. Long ◽  
I.H. Goodridge ◽  
J.P. King ◽  
A.J. Holden ◽  
J.G. Metcalfe ◽  
...  
Keyword(s):  
Power Transistor

A 4 GHz High Power Transistor - Design and Reliability

1973 ◽  
Author(s):  
P. Wang ◽  
J. Chen ◽  
P. Froess ◽  
S. Kakihana
Keyword(s):  
High Power ◽  
Power Transistor

scholarly journals Short-Circuit Capability Exploration of Silicon Carbide Devices

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Electronic Systems ◽  
Power Electronic ◽  
Power Transistor ◽  
Power Transistors ◽  
Capacitive Load ◽  
Short Circuit Condition

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.

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