scholarly journals Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

2017 ◽  
Vol 2017 (13) ◽  
pp. 1868-1876 ◽  
Author(s):  
Samuel D. Cosham ◽  
Stephen P. Richards ◽  
Troy Manning ◽  
Michael S. Hill ◽  
Andrew L. Johnson ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Work Functions ◽  
P Type ◽  
High Work ◽  
Type Nickel

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Thermal Anemometer Based on Metal Organic Chemical Vapour Deposition p-Type (Bi1−xSbx)2Te3 Thin Films

2009 ◽  
Vol 7 (5) ◽  
pp. 929-932
Author(s):  
A. Mzerd ◽  
A. Aboulfarah ◽  
A. Arbaoui ◽  
N. Hassanain ◽  
M. Abd-Lefdil ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Thermal Anemometer ◽  
P Type

Structural and morphological characterization of the Cd-rich region in Cd1-xZnxO thin films grown by atmospheric pressure metal organic chemical vapour deposition

2019 ◽  
Vol 683 ◽  
pp. 128-134 ◽  
Author(s):  
Adelaida Huerta-Barberà ◽  
Esther de Prado ◽  
Maria del Carmen Martínez-Tomás ◽  
Saïd Agouram ◽  
Elias Muñoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Morphological Characterization ◽  
Organic Chemical ◽  
Rich Region ◽  
Metal Organic

scholarly journals High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Zhiming Li ◽  
Jinping Li ◽  
Haiying Jiang ◽  
Yanbin Han ◽  
Yingjie Xia ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Doping Profile ◽  
Morphological Properties ◽  
Organic Chemical ◽  
Superlattice Structure ◽  
Metal Organic ◽  
P Type ◽  
Mg Doped

The highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. The rapid thermal annealing (RTA) has been employed for the effective activation and generation of holes, and a minimum p-type resistivity of 3 Ω·cm for p-type Al0.3Ga0.7N was achieved. The RTA annealing impacted on electrical, doping profile and morphological properties of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure have been also discussed. The quality of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure degraded after annealing from HRXRD. At appropriate annealing temperature and time, surface morphology of Mg-doped Al0.3Ga0.7N can be improved. A step-like distribution of [Mg] and [H] in p-type Al0.3Ga0.7N was observed, and thermal diffusion direction of [Mg] and [H] was also discussed.

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