An Approach to Rigid, Optically Active Chelate Ligands withC2Symmetry: Dialkylhexaphosphapentaprismanes

2013 ◽  
Vol 2013 (33) ◽  
pp. 5769-5780 ◽  
Author(s):  
Christine Höhn ◽  
Irene Keller ◽  
Lars Rohwer ◽  
Frank W. Heinemann ◽  
Ulrich Zenneck
Keyword(s):  
Optically Active ◽  
Chelate Ligands

Asymmetrische Katalysen, 13 [1]. Chelat-Liganden und ihre Rhodium-Komplexe mit seitlichen Asymmetriezentren und ihre Anwendung in der enantioselektiven Katalyse / Asymmetric Catalyses. 13 [1]. Chelate Ligands and their Rhodium Complexes with Lateral Asymmetrie Centers and their Use in Enantioselective Catalysis

1983 ◽  
Vol 38 (11) ◽  
pp. 1332-1338 ◽  
Author(s):  
Henri Brunner ◽  
A. F. M. Mokhlesur Rahman
Keyword(s):  
Cinnamic Acid ◽  
Asymmetric Hydrogenation ◽  
Optically Active ◽  
Enantioselective Catalysis ◽  
Rhodium Complexes ◽  
Chelate Ligands

Abstract The chelate ligands 1-3 with lateral asymmetric centers at the nitrogen atoms were prepared and characterized. In the Rh complexes 4 and 5 the asymmetric centers directly interact with those coordination positions where during enantioselective catalysis pro-chiral substrates are converted into optically active products. The compounds 4 and 5, as well as the in situ catalysts [Rh(COD)Cl]2/2 were used in the asymmetric hydrogenation of α-N[acetamino]cinnamic acid and in the asymmetric hydrosilylation of acetophenone with diphenylsilane. The low optical inductions obtained result from the catalyst loosing its chiral information during catalysis due to racemization or fragmentation.

Optical analysis of ink and other contaminants in process waters

TAPPI Journal ◽  
2012 ◽  
Vol 11 (8) ◽  
pp. 51-58
Author(s):  
ANTTI HAAPALA ◽  
MIKA KÖRKKÖ ◽  
ELISA KOIVURANTA ◽  
JOUKO NIINIMÄKI
Keyword(s):  
Optically Active ◽  
Process Water ◽  
Paper Machine ◽  
Optical Analysis ◽  
Direct Process ◽  
Active Components ◽  
Water Contaminants ◽  
Dependent Measurement ◽  
Measurement Methodology

Analysis methods developed specifically to determine the presence of ink and other optically active components in paper machine white waters or other process effluents are not available. It is generally more interest¬ing to quantify the effect of circulation water contaminants on end products. This study compares optical techniques to quantify the dirt in process water by two methods for test media preparation and measurement: direct process water filtration on a membrane foil and low-grammage sheet formation. The results show that ink content values obtained from various analyses cannot be directly compared because of fundamental issues involving test media preparation and the varied methodologies used to formulate the results, which may be based on different sets of assumptions. The use of brightness, luminosity, and reflectance and the role of scattering measurements as a part of ink content analysis are discussed, along with fine materials retention and measurement media selection. The study concludes with practical tips for case-dependent measurement methodology selection.

Microscopic Structure of Er-Related Optically Active Centers in Si

2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz
Keyword(s):  
Ground State ◽  
Photoluminescence Spectrum ◽  
Zeeman Effect ◽  
Optically Active ◽  
Single Type ◽  
Active Centers ◽  
Mbe Growth ◽  
Spectral Components ◽  
Er Doped ◽  
Successful Observation

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.

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