Nb3Sn single-phase targets for fiber-reinforced-superconductors and technique of preparing superconducting films without post annealing

1995 ◽  
Vol 115 (4) ◽  
pp. 1-13
Author(s):  
Kazuaki Arai ◽  
Hiroshi Tateishi ◽  
Ko Agatsuma ◽  
Takashi Saito ◽  
Nobuyuki Sadakata ◽  
...  
Keyword(s):  
Single Phase ◽  
Superconducting Films ◽  
Fiber Reinforced ◽  
Post Annealing

scholarly journals Nb3Sn Single Phase Targets for Fiber-Reinforced-Supercoductors and Preparation Technique of Superconducting Films without Post Annealing

1994 ◽  
Vol 114 (10) ◽  
pp. 701-709
Author(s):  
Kazuaki Arai ◽  
Hiroshi Tateishi ◽  
Ko Agatsuma ◽  
Takashi Saito ◽  
Nobuyuki Sadakata ◽  
...  
Keyword(s):  
Single Phase ◽  
Superconducting Films ◽  
Preparation Technique ◽  
Fiber Reinforced ◽  
Post Annealing

Hole Concentration and Tc in the TI2-x-zBa2+xCa2+xCu3O10-y System

1992 ◽  
Vol 275 ◽  
Author(s):  
M. Paranthaman ◽  
M. Foldeaki ◽  
A. NaziriPour ◽  
A. M. Hermann
Keyword(s):  
Chemical Analysis ◽  
Conduction Band ◽  
Oxygen Vacancies ◽  
Single Phase ◽  
Hole Concentration ◽  
Impurity Phase ◽  
Quartz Tube ◽  
Post Annealing ◽  
Impurity Phases ◽  
Wet Chemical

ABSTRACTSingle phase Tl-2223 samples were prepared in the TI2-x-zBa2Ca2+xCu3O10-y (z represent Tl vacancies in the range 0.22 – 0.27 and y represent oxygen vacancies in the range 0.17 – 0.33) system with x between 0 and 0.4. A small impurity phase was found at x = 0.6. All samples were found to be tetragonal. The Tc varied between 112 and 118 K for the “as-synthesized” samples. After post-annealing in a sealed quartz tube under vacuum at 750*deg;C for 10 days, the Tc increased from 116 to 122 K for x = 0.3 and from 118 to 120 K for x = 0,4 samples. Although x = 0.3 sample had small impurity phases after post-annealing, a large amount of impurity phases were found for x = 0.4 sample after post-annealing. Wet chemical analysis showed that all samples were both Tl and oxygen deficient. The Tc was found to increase with increasing hole concentration. The origin of the holes for all these samples is due to Ca2+ substitution on the TI3+ sites and overlap of Tl-6s band with the conduction band of the CuO2 sheets.

Processing effects on high Tc properties of YBa2Cu3O7−x films from carboxylate solution precursors

1993 ◽  
Vol 8 (2) ◽  
pp. 261-267 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Superconducting Films ◽  
Treatment Temperature ◽  
Film Properties ◽  
High Tc ◽  
Post Annealing ◽  
Oriented Films ◽  
Processing Effects ◽  
Temperature Time

Heat-treatment temperature/time and ambient effects on the properties of YBa2Cu3O7−x superconducting films derived from carboxylate precursors were investigated. The thin films were processed under O2, N2, or N2/O2 mixed atmosphere. The use of N2 or N2-rich atmosphere facilitated the 123 phase formation, grain growth, and orientation due to liquid phase assist sintering. Thin films with Tc(zero) = 87.8 and Jc > 105 A/cm2 at 77 K were prepared under such atmosphere at T ≤ 920 °C. Higher temperatures were required for thin films processed under O2 atmosphere and inferior transport properties were obtained. Processing above the melting temperature resulted in highly oriented films with dense microstructures and large grains, but significant post annealing was needed to obtain good film properties.

scholarly journals Effect of Gate Dielectrics on the Performance of P-Type Cu2O TFTs Processed at Room Temperature

2013 ◽  
Vol 856 ◽  
pp. 215-219 ◽  
Author(s):  
H.A. Al-Jawhari ◽  
J.A. Caraveo-Frescsa
Keyword(s):  
Indium Tin Oxide ◽  
Room Temperature ◽  
Single Phase ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Operating Voltage ◽  
Dc Magnetron Sputtering ◽  
Post Annealing ◽  
Semiconducting Properties ◽  
P Type

Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling-0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of-2V. The advantages of using STO as a gate dielectric relative to ATO are discussed.

The Effect of Annealing Conditions on Magnetron Sputtered Superconducting Tl-Based Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
S.H. Liou
Keyword(s):  
Annealing Temperature ◽  
Superconducting Films ◽  
Film Plane ◽  
Major Phase ◽  
X Ray ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Heat Treated ◽  
Post Annealing Temperature

AbstractThe annealing steps have been shown to be a crucial determinant of the quality of Tl‐based superconducting films. In this study, we discuss the formation of the superconducting Tl2Ba2CaCu2O8 and Tl2Ba2Ca2Cu3O10 phases with varied post‐annealing temperature and fixed annealing time. A x‐ray, electron micro‐probe, and scanning electron microscopy were carried out to evaluate the structure of superconducting phases formed for each annealing condition. For films deposited on SrTiO3 substrates and heat‐treated at 870°C for 15 min, the lower Tc phase Tl2Ba2CaCu2O8 becomes a major phase. The films consist of nearly pure Tl2Ba2Ca2Cu3O10 phase with Tc (R=0) in the range of 100K to 118K and c‐axis perpendicular to the film plane were obtained after annealing 880‐890°C for 15 min. These films were epitaxy growth on SrTi03 substrates.

SPUTTERING DEPOSITION OF Tl–Ca–Ba–Cu–O THIN FILMS WITH ZERO RESISTANCE AT 101 K

1989 ◽  
Vol 03 (13) ◽  
pp. 1013-1016 ◽  
Author(s):  
S. L. YAN ◽  
X. J. HU ◽  
Q. X. SONG ◽  
H. L. CAO ◽  
J. YAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface Structure ◽  
Single Phase ◽  
Xrd Analysis ◽  
Dc Magnetron Sputtering ◽  
Ceramic Substrates ◽  
Sputtering Deposition ◽  
Post Annealing ◽  
Zero Resistance

Superconducting Tl–Ca–Ba–Cu–O thin films have been prepared by dc magnetron sputtering from a pair of Tl 2 Ca 1 Ba 3 Cu 4 O y bulk targets. The post-annealing films on ZrO 2 ceramic substrates exhibit an onset temperature of about 125 K and zero resistance as high as 101 K. SEM showed a smooth terraced surface structure. The XRD analysis proved that the films were polycrystalline and were not single phase superconducting material.

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